Abstract:Using first-principles calculations, we explore the electronic and magnetic properties of graphene nanomesh (GNM), a regular network of large vacancies, produced either by lithography or nanoimprint. When removing an equal number of A and B sites of the graphene bipartite lattice, the nanomesh made mostly of zigzag (armchair) -type edges exhibit antiferromagnetic (spin unpolarized) states. In contrast, in situations of sublattice symmetry breaking, stable ferri(o)magnetic states are obtained. For hydrogen-passivated nanomesh, the formation energy is dramatically decreased, and ground state is found to strongly depend on the vacancies shape and size. For triangular-shaped holes, the obtained net magnetic moments increase with the number difference of removed A and B sites in agreement with Lieb's theorem for even A + B. For odd A + B triangular meshes and all cases of nontriangular nanomeshes, including the one with even A + B, Lieb's theorem does not hold anymore, which can be partially attributed to the introduction of armchair edges. In addition, large triangular-shaped GNMs could be as robust as nontriangular GNMs, providing a possible solution to overcome one of the crucial challenges for the sp magnetism. Finally, significant exchange-splitting values as large as similar to 0.5 eV can be obtained for highly asymmetric structures evidencing the potential of GNM for room-temperature carbon-based spintronics. These results demonstrate that a turn from zero-dimensional graphene nanoflakes throughout one-dimensional graphene nanoribbons with zigzag edges to GNM breaks localization of unpaired electrons and provides deviation from the rules based on Lieb's theorem. Such delocalization of the electrons leads the switch of the ground state of a system from an antiferromagnetic narrow gap insulator discussed for graphene nanoribons to a ferromagnetic or nonmagnetic metal.

Large Tunable Linear Magnetoresistance in Gold Nanoparticle Decorated Graphene

Magnetotransport Across the Metal-Graphene Hybrid Interface and Its Modulation by Gate Voltage

Very large magnetoresistance in graphene nanoribbons

Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

Giant Positive Magnetoresistance in Co@CoO Nanoparticle Arrays

Nonlinear-linear transition of magnetoelectric effect in magnetic graphene nanoflakes on substrates

Mobility Controlled Linear Magnetoresistance with 3D Anisotropy in a Layered Graphene Pallet

Magnetic Proximity Effect in Graphene Coupled to A Bifeo3 Nanoplate

Giant thermal magnetoresistance driven by graphene magnetoplasmon

Substantially enhanced carrier mobility in graphene in proximity to ferromagnetic insulator EuS

Extremely large, linear, and controllable positive magnetoresistance in neodymium-doped graphene foam for magnetic sensors

Theory Of Huge Tunneling Magnetoresistance In Graphene

Room-temperature electrically tunable magnetoresistance behavior in graphene nanocrystalline

Electrically Tunable Large Magnetoresistance in Graphene/silicon Schottky Junctions

Large Linear Magnetoresistance of High‐Mobility 2D Electron System at Nonisostructural γ‐Al 2 O 3 /SrTiO 3 Heterointerfaces

Inducing and Optimizing Magnetism in Graphene Nanomeshes

Large Magnetoresistance in Few Layer Graphene Stacks with Current Perpendicular to Plane Geometry

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Inducing Magnetism in Graphene Nanomesh

Sign-changeable spin-filter efficiency and giant magnetoresistance in seamless graphene nanoribbon junctions

Low-temperature carrier transport in magnetic field in sandwich-like graphene/Co nanoparticles/graphene structure