Origin of the High P-Doping in F Intercalated Graphene on Sic

Y. C. Cheng,T. P. Kaloni,G. S. Huang,U. Schwingenschloegl
DOI: https://doi.org/10.1063/1.3623484
IF: 4
2011-01-01
Applied Physics Letters
Abstract:The atomic and electronic structures of F intercalated epitaxial graphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].
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