Abstract:Recent observations of the negative differential conductance (NDC) phenomenon in graphene field-effect transistors (FET) open up new opportunities for their application in graphene-based fast switches, frequency multipliers and, most importantly, in high frequency oscillators up to the terahertz regime. Unlike conventional two-terminal NDC devices that rely on resonant tunneling and inter-valley transferring, in the present work, it has been shown that the universal NDC phenomenon of graphene-based FETs originates from their intrinsic nonlinear carrier transport under a strong electric field. The operation of graphene-NDC devices depends strongly on the interface between graphene and dielectric materials, the scattering-limited carrier mobility, and on the saturation velocity. To reveal such NDC behavior, the output characteristics of GFET are investigated rigorously, with both an analytical model and self-consistent transport equation, and with a multi-electrical parameter simulation. It is demonstrated that the contact-induced doping effect plays an important role in the operational efficiency of graphene-based NDC devices, rather than the ambipolar behavior associated with the competition between electron and hole conductances. In the absence of a NDC regime or beyond one, ambipolar transport starts at Vds > 2Vgs at the drain end, and as the dielectric layer begins to thin down, the kink-like saturation output characteristic is enhanced by the quantum capacitance contribution. These observations reveal the intrinsic mechanism of the NDC effect and open up new opportunities for the performance improvement of GFETs in future high-frequency applications, beyond the current paradigm based on two-terminal diodes.

High-field Transport Properties of Graphene

Theoretical analysis of high-field transport in graphene on a substrate

High-Field Electrical and Thermal Transport in Suspended Graphene

Nonlinear Current-Voltage Characteristics and Enhanced Negative Differential Conductance in Graphene Field Effect Transistors.

Low-field magnetotransport in graphene cavity devices.

Giant Phonon-induced Conductance in Scanning Tunneling Spectroscopy of Gate-tunable Graphene

Diffusion coefficient, correlation function, and power spectral density of velocity fluctuations in monolayer graphene

Maximum-entropy principle for ac and dc dynamic high-field transport in monolayer graphene

Giant Phonon-Induced Conductance in Scanning Tunnelling Spectroscopy of Gate-Tunable Graphene

Temperature and gate voltage dependent electrical properties of graphene field-effect transistors

Thermoelectric and Thermal Transport Properties of Graphene under Strong Magnetic Field

Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance

Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields

Evidence for Local Spots of Viscous Electron Flow in Graphene at Moderate Mobility

Accessing The Transport Properties Of Graphene And Its Multilayers At High Carrier Density

Thermal and Thermoelectric Properties of Graphene

Non-Ohmic behavior of carrier transport in highly disordered graphene

Surface Polar Phonon Dominated Electron Transport in Graphene

Hot phonon effects on high-field transport in 2DEG GaN

Thermal Dissipation of Electric Transport in Graphene P-N Junctions in Magnetic Field

Electrical Transport in High Quality Graphene Pnp Junctions