Abstract:The epitaxy of AlGaN on metallic substrates exhibits numerous advantages including flexibility, vertical carrier injection, and enhanced heat dissipation for optoelectronic devices; however, there are still many challenges for the growth of AlGaN according to the serious interfacial reaction and lattice mismatch by conventional epitaxial techniques. In this work, the c-oriented AlGaN is grown on polycrystalline Mo substrate by van der Waals (vdWs) epitaxy with graphene as the insertion layer. A high-temperature annealed AlN is deposited as the nucleation layer, which optimizes the crystalline quality of following AlGaN. The isolation effect of the graphene insertion layer results in a good epitaxial interface, which suppresses the atoms diffusion and chemical reaction, demonstrating by the theoretical calculation of high energy barriers for Al/Mo atoms penetrating through graphene insertion layer. The ultraviolet (UV) detector is fabricated by further growing a n-AlGaN layer as the photosensitive absorber, whose responsivity (1.7 × 10–3 A W–1) is comparable with that fabricated on conventional sapphire. Even better, the UV detector on the Mo substrate possesses enhanced heat dissipation ability due to its higher thermal conductivity, and the temperature elevation after consistently applying a drive voltage largely decreases by 50%. This work enlightens the growth of AlGaN materials and fabrication of high-power/high-voltage optoelectronic devices on polycrystalline metallic substrates by the mean of vdWs epitaxy.

Response Time Improvement of AlGaN Photoconductive Detectors by Adjusting Crystal-Nuclei Coalescence Process in Metal Organic Vapor Phase Epitaxy

The Time Response of a Uniformly Doped Transmission-Mode NEA AlGaN Photocathode Applied to a Solar-Blind Ultraviolet Detecting System

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

AlGaN UV Detector with Largely Enhanced Heat Dissipation on Mo Substrate Enabled by van der Waals Epitaxy

Enhanced Photoresponse of Single GaN Microwire Ultraviolet Photodetectors by Heteroepitaxial AlN Coating Layer

Fast Growth of Gan Epilayers Via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications

Effects of AlGaN Layer Parameter on Ultraviolet Response of N+-Gan/i-alxga1-xn/n+-gan Structure Ultraviolet-Infrared Photodetector

The Effect of Transparent Conductive Nanocrystalline Oxide Thin Layer on Performance of UV Detectors Fabricated on Fe-doped GaN

Suppression of Persistent Photoconductivity AlGaN/GaN Heterostructure Photodetectors Using Pulsed Heating

High-performance Nonpolar A-Plane GaN-based Metal–semiconductor–metal UV Photo-Detectors Fabricated on LaAlO3 Substrates

Photocurrent Studies of Ultraviolet Detector Based on Gallium Nitride Epilayer

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Economically detaching transparent and flexible (Al,Ga)N nanowire films with improved photoelectric response in view of ultraviolet photodetectors

Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays

Multi-bands Photoconductive Response in AlGaN/GaN Multiple Quantum Wells

Temperature enhanced responsivity and speed in an AlGaN/GaN metal-heterostructure-metal photodetector

High responsivity and controllable recovery ultraviolet detector based on WO3 gate AlGaN/GaN heterostructure with an integrated micro-heater

Enhancement of ultraviolet detecting by coupling the photoconductive behavior of GaN nanowires and p-n junction.

Effects of TMAl predose time on the quality of submicron-thick GaN on Si

High-Speed and Ultrasensitive Solar-Blind Ultraviolet Photodetectors Based on In Situ Grown β-Ga2O3 Single-Crystal Films

Mid-Infrared Photoconductive Response in Algan/Gan Step Quantum Wells