Abstract:We study Anderson localization in graphene with short-range disorder using the real-space Kubo-Greenwood method implemented on graphics processing units. Two models of short-range disorder, namely, the Anderson on-site disorder model and the vacancy defect model, are considered. For graphene with Anderson disorder, localization lengths of quasi-one-dimensional systems with various disorder strengths, edge symmetries, and boundary conditions are calculated using the real-space Kubo-Greenwood formalism, showing excellent agreement with independent transfer matrix calculations and superior computational efficiency. Using these data, we demonstrate the applicability of the one-parameter scaling theory of localization length and propose an analytical expression for the scaling function, which provides a reliable method of computing the two-dimensional localization length. This method is found to be consistent with another widely used method which relates the two-dimensional localization length to the elastic mean free path and the semiclassical conductivity. Abnormal behavior at the charge neutrality point is identified and interpreted to be caused by finite-size effects when the system width is comparable to or smaller than the elastic mean free path. We also demonstrate the finite-size effect when calculating the two-dimensional conductivity in the localized regime and show that a renormalization group beta function consistent with the one-parameter scaling theory can be extracted numerically. For graphene with vacancy disorder, we show that the proposed scaling function of localization length also applies. Lastly, we discuss some ambiguities in calculating the semiclassical conductivity around the charge neutrality point due to the presence of resonant states.

Shape of the Landau Subbands in Disordered Graphene

Shape of Disorder-Broadened Landau Subbands in Graphene

Theoretical Analysis Of The Density Of States Of Graphene At High Magnetic Fields Using Haldane Pseudopotentials

Electronic Transport in Disordered Bilayer and Trilayer Graphene

Anderson Localization in Two-Dimensional Graphene with Short-Range Disorder: One-parameter Scaling and Finite-Size Effects

Electronic And Transport Properties In Geometrically Disordered Graphene Antidot Lattices

Optical Conductivity Of Disordered Graphene Beyond The Dirac Cone Approximation

Fingerprints of Disorder Source in Graphene

Splitting of the Zero-Energy Landau Level and Universal Dissipative Conductivity at Critical Points in Disordered Graphene

Electronic Properties of Disordered Graphene Antidot Lattices

Density of States and Its Local Fluctuations Determined by Capacitance of Strongly Disordered Graphene

Quantum Hall Effect of Dirac Fermions in Graphene: Disorder Effect and Phase Diagram

Dirac Fermions and Pseudomagnetic Fields in Two-Dimensional Electron Gases with Triangular Antidot Lattices

Anderson Localization of Electron States in Graphene in Different Types of Disorder

Unique nature of the lowest Landau level in finite graphene samples with zigzag edges: Dirac electrons with mixed bulk-edge character

Quantum Hall Effect in Bilayer Graphene: Disorder Effect and Quantum Phase Transition

Ising quantum Hall ferromagnetism in Landau levels $\left\vert N\right\vert \geq 1$ of bilayer graphene

Magnetic Field Independent Shape of the Zero-Energy Landau Levels in a Disordered T3 Model

Landau Levels and Quantum Hall Effect in Graphene Superlattices

Localization and the Kosterlitz-Thouless Transition in Disordered Graphene.

Landau-Level Mixing and SU(4) Symmetry Breaking in Graphene