Abstract:In the last few years the InGaAs/GaAs heterostructure system has received increasing interest for electronic devices and microwave industries. The strained quantum well (QW) laser has more beneficial effect than other QW lasers. For example, lower threshold current density, wider modulation bandwidth and the emission wavelength of strained QW laser can be adjusted by appropriately changing the strain. With regard to InGaAs/GaAs material system, indium distribution influence on the performances of device directly. Surface segregation of In ions during the growth process is the major factor for the indium distribution in InGaAs/GaAs heterostructure. The heteroepitaxy of InGaAs layer on GaAs substrates is characterized by a strong segregation of In atoms that accumulate at the growth front and substantially modifies the In-composition profile, resulting in different electronic and optical properties of the devices based on that material. Segregation determines the composition profiles of QW in the growth direction in many semiconductor systems, and consequently, the quantized levels are strongly influenced. The samples of InGaAs/GaAs strained QW are grown in Riber32 compact 21 solid source molecular beam epitaxy (MBE) system equipped with a valved cracker cell for arsenic and reflection high energy electron diffraction (RHEED) for in situ monitoring of the growth process. Growth temperature is calibrated by infrared pyrometer. The photoluminescence (PL) was studied on InGaAs/GaAs strained QW with various different growth temperature and structure parameters. In ions segregation processes was illustrated based on the Muraki model and the differential calculation were compared with experiment results in detail. The results show that some important information was obtained about the effect of indium segregation, desorption and In-Ga intermixing on optical quality of strained quantum well. The effect is serious, and the peak position of PL is blue shifted with increasing the growth temperature. It is demonstrated that indium segregation and In-Ga intermixing have no effect on the optical properties of InGaAs/GaAs strained quantum well with In content below x=0.2 and the growth temperature below 560 ℃ by PL analysis.

Strain Effect on Temperature Dependent Photoluminescence from In x Ga 1-x As/GaAs Quantum Wells

Difference of luminescent properties between strained InAsP/InP and strain-compensated InAsP/InGaAsP MQWs

Temperature dependence of photoluminescence from as-grown and plasma-etched InAs0.45P0.55/In0.68Ga0.32As0.45P0.55 strained single quantum well

Temperature Dependence of the Photoluminescence Properties and the Research on the Mechanism of In0.2Ga0.8As/GaAs Single Quantum Well

Temperature dependent photoluminescence study of In0.63Ga0.37As/InP compressively strained single quantum wells

The effects of strain compensation in type-II GaAsSb/InGaAs quantum wells grown on GaAs (001) substrates

The Effect of Inserting Strain-Compensated Ganas Layers on the Luminescence Properties of Gainnas/Gaas Quantum Well

The Strain, Energy Band and Photoluminescence of GaAs0.92Sb0·08/Al0.3Ga0.7As Multiple Quantum Wells Grown on GaAs Substrate

The Influence Of Graded Inxga1-Xas On Strain Distribution And The Band Gap In The Inas/Gaas Quantum Dots

Strain Effect and Characteristics of Gainp/Algainp Strain-Compensated Multiple Quantum Wells

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Effects of the Insertion of InAs Strain-Compensating Layers on Photoluminescence Properties of GaAsN/GaAs Quantum-Well Structures

Pressure Dependence of Photoluminescence in InxGa1 − Xas/alyga1 − Yas Strained Quantum Wells with Different Widths

A Comparison of Photoluminescence Properties of InGaAs/GaAs Quantum Dots with a Single Quantum Well

Temperature Dependence of PL Spectra of InGaAs/GaAs Single Quantum Well Properties

Photoluminescence Studies Of Modulation-Doped In0.60ga0.40as/In0.52al0.48as Strained Multiple-Quantum Wells

Photoluminescence study of strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy

Influence of Growth Temperature and Structure Parameters on Optical Characteristic InGaAs/GaAs Quantum Wells

Effects Of Gaas On Photoluminescence Properties Of Self-Assembled Inas Quantum Dots

Structural And Optical Properties Of Strain-Compensated Gaassb/Gaas Quantum Wells With High Sb Composition

The thermalization of photoexcited hot carriers in InxGa1−xAsGaAs strained single quantum well structures