Low temperature firing microwave dielectric ceramics (K0.5Ln0.5)MoO4 (Ln=Nd and Sm) with low dielectric loss

Di Zhou,Lixia Pang,Jing Guo,Gaoqun Zhang,Ying Wu,Hong Wang,Xi Yao
DOI: https://doi.org/10.1016/j.jeurceramsoc.2011.07.009
IF: 5.7
2011-01-01
Journal of the European Ceramic Society
Abstract:In the present work, novel low temperature firing microwave dielectric ceramics (K0.5Ln0.5)MoO4 (Ln=Nd and Sm) were prepared via the traditional solid state reaction method. A pure monoclinic phase can be formed at a low sintering temperature around 680°C for both (K0.5Nd0.5)MoO4 and (K0.5Sm0.5)MoO4 ceramics. The densification temperature for the (K0.5Nd0.5)MoO4 and (K0.5Sm0.5)MoO4 ceramics are 700°C and 800°C for 2h, respectively. The best microwave dielectric properties for (K0.5Nd0.5)MoO4 was obtained in ceramic sample sintered at 760°C for 2h, with a dielectric permittivity of 9.8, a Qf about 69,000GHz and a temperature coefficient of frequency about −62ppm/°C. The best microwave dielectric properties for (K0.5Sm0.5)MoO4 was obtained in ceramic sample sintered at 800°C for 2h, with a dielectric permittivity of 9.7, a Qf about 20,000GHz and a temperature coefficient of frequency about −65ppm/°C.
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