Preparation of tin oxide thin films on silicon substrates via sol-gel routes and the prospects for the H 2S gas sensor

Shuping Gong,Jianqiao Liu,Lin Quan,Qiuyun Fu,Dongxiang Zhou
DOI: https://doi.org/10.1166/sl.2011.1577
2011-01-01
Sensor Letters
Abstract:Sol-gel dip-coating technique is employed to fabricate undoped and Cu-doped SnO2 thin films on silicon substrates. The gas sensing characteristics and prospects of the films for H2S detection are discussed. The influences of operating temperature, Cu doping content and gas concentration on sensor response are investigated. I-V characteristics illustrate the potential barrier height in p-n junction between CuO and SnO2 grains would be affected by the increasing Cu additive. The Cu-doped thin film has the abilities of fast response and completely recovery. It is found to be potentially applicable in practical use.
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