High Overload Ability Optimization of a MEMS High-G Accelerometer

SHI Yun-bo,LI Ping,ZHU Zheng-qiang,LIU Jun,ZHANG Xiao-ming
DOI: https://doi.org/10.3969/j.issn.1000-3835.2011.07.053
2011-01-01
Abstract:The structure to be measured is easy to destroy if a designed MEMS high-g acceleration sensor has less-overload ability and it is used in harsh impact environment.Through analyzing the effect of a sensor structure on its anti-overload capacity and collecting its structural damage statistics in high impact testing,a new method was put forward,it could optimize the overload-resistant ability of a high-g acceleration sensor.With this method,chamfers were added at root and end of a beam being the part most easily to be broken in a sensor structure in order to disperse the stress of such areas.When impact loads were exerted on a sensor structure,it could increase the high-overload-resistant ability.The feasibility of the method was analyzed with theoretical simulations.Then,sensors were tested with Hopkinson bar impact test method.The test result indicated that the high-overload-resistant capacity of an accelerometer optimized can be raised from 180,000g to 240,000g.It was shown that the proposed method can notablly increase the high-overload-resistane ability of a MENS high-g accelerameter.
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