Abstract:We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and the effective masses of the electron and hole. The diameters of the nanowires being studied are up to 50 {\AA}. As shown in our calculations, the Ge [110] nanowires possess a direct band gap, in contrast to the nature of an indirect band gap in bulk. We discovered that the band gap and the effective masses of charge carries can be modulated by applying uniaxial strain to the nanowires. These strain modulations are size-dependent. For a smaller wire (~ 12 {\AA}), the band gap is almost a linear function of strain; compressive strain increases the gap while tensile strain reduces the gap. For a larger wire (20 {\AA} - 50 {\AA}), the variation of the band gap with respect to strain shows nearly parabolic behavior: compressive strain beyond -1% also reduces the gap. In addition, our studies showed that strain affects effective masses of the electron and hole very differently. The effective mass of the hole increases with a tensile strain while the effective mass of the electron increases with a compressive strain. Our results suggested both strain and size can be used to tune the band structures of nanowires, which may help in design of future nano-electronic devices. We also discussed our results by applying the tight-binding model.

Band gap tunability in semiconductor nanocrystals by strain: Size and temperature effect

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Strain-Induced Optical Absorption Properties of Semiconductor Nanocrystals

Size-dependent bandgap modulation of ZnO nanowires by tensile strain.

Local-Strain-Induced Charge Carrier Separation and Electronic Structure Modulation in Zigzag ZnO Nanotubes: Role of Built-In Polarization Electric Field

Bandgap engineering and manipulating electronic and optical properties of ZnO nanowires by uniaxial strain.

Strain Induced Quantum Effect in Semiconductors

Bandgap Shift in SnO2 Nanostructures Induced by Lattice Strain and Coordination Imperfection

Linear Strain-Gradient Effect on the Energy Bandgap in Bent Cds Nanowires

Uniaxial Strain Modulated Band Gap of Zno Nanostructures

Strain-Induced Bandgap Engineering In C3n Nanotubes

Tuning the Band Structures of Single Walled Silicon Carbide Nanotubes with Uniaxial Strain: A First Principles Study

Size Effect on the Bandgap of Semiconductor Nanocrystals

Strain Modulated Electronic Properties of Ge Nanowires - A First Principles Study

Ab-initio Study of Size and Strain Effects on the Electronic Properties of Si Nanowires

The Bandgap Distribution Investigated Across the Strain-Induced Bending ZnO Nanowire

Systematic strain-induced bandgap tuning in binary III-V semiconductors from density functional theory

Modifying Optical Properties of ZnO Nanowires Via Strain-Gradient

Size effect on the bandgap of II–VI semiconductor nanocrystals

Quantum Effects of Strain Influence on the Doping Energy in Semiconductors

Band gap engineering of monolayer ZrGeTe<sub>4</sub> via strain: A first-principles study