Experimental Investigation of Back Electron Transfer and Band Edge Shift in Dyed Tio2 Electrodes

Changneng Zhang,Shuanghong Chen,Huajun Tian,Yang Huang,Zhipeng Huo,Songyuan Dai,Fantai Kong,Yifeng Sui
DOI: https://doi.org/10.1021/jp111585s
2011-01-01
Abstract:In this work, we investigated the iodine effect on the kinetics of back electron transfer and the band edge shift in the dyed TiO2 semiconductor electrodes. The iodine adsorbed on the TiO2 surface as the recombination centers resulted in the positive shift in band edge of the TiO2 electrode with the increase of I-3(-) concentration. Detailed analysis of the back electron transfer indicated that the higher value of the transfer coefficient under the irradiation condition than in the dark was due to the possible faster recombination channels about the decomposition of I-2 and the decomposition of I-2 via the triplet-state sensitizers on the TiO2 surface. From impedance spectra of the solar cells, it could be concluded that the smaller charge transfer resistance at the TiO2/electrolyte interface was attributed to the positive shift of band edge in the iodine-adsorbed TiO2 electrode with the increase of I-3(-) concentration in the electrolytes. An analytical dependence of the short-circuit photocurrent density (J(sc)) on the illumination intensity found that the increased efficiency of electron injection (Phi(inj)) could be attributed to the positive shift of band edge in the iodine-adsorbed TiO2 electrode, resulting in a slightly increased J(sc).
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