Ab Initio Investigation of Pressure-Induced Structural Transitions and Electronic Evolution of Th3N4
Yue Zhang,Yongliang Guo,Zhiguang Liao,Changdong Liu,Ping Huai,Zhiyuan Zhu,Xuezhi Ke
DOI: https://doi.org/10.1080/08957959.2020.1763335
2020-01-01
High Pressure Research
Abstract:The crystal structures, lattice dynamics, mechanical, electronic properties, and electron-phonon coupling of under environmental conditions and high pressures have been studied by merging first-principles calculations and particle-swarm optimization algorithm. Four structures are identified for , including the , , , and C2/m phases, in which the , , and C2/m phases are newly predicted. Their mechanical properties, including the Poisson's ratio sigma, the elastic anisotropy factor , and the Pugh's ratio have been calculated and discussed. The results show that the , , and phases of behave ductile nature, while the C2/m phase behaves brittle nature. Among them, the phase of almost exhibits completely anisotropic nature. Besides, our electronic band structure calculations show that the pressure-induced semiconductor-metal transition occurs following the to phase transition. Further, the electron-phonon coupling of the phase has been analyzed. The results we obtained are of significance to further understand the physical essence of and its practical engineering applications.