Decoding the Double/Multiple Hysteresis Loops in Antiferroelectric Materials
Tengfei Hu,Zhengqian Fu,Zhenqin Li,Meng Liu,Linlin Zhang,Ziyi Yu,Xuefeng Chen,Yunzhe Zheng,Tie Li,Yuelin Wang,Genshui Wang,Xianlin Dong,Fangfang Xu
DOI: https://doi.org/10.1021/acsami.1c19459
2021-12-09
Abstract:Antiferroelectric materials has become one of the most promising candidates for pulsed power capacitors. The polarization versus electric-field hysteresis loop is the key electrical property for evaluating their energy-storage performance. Here, we applied in situ biasing transmission electron microscopy to decode two representative energy-storage behaviors-namely, multiple and double hysteresis loops-in (Pb,La)(Zr,Sn,Ti)O<sub>3</sub> system. Simultaneous structural examination and domain/defects observation establish a direct relationship between phase transitions and hysteresis loops. Sustaining a smaller period of modulated structure to a certain applied electric field and then undergoing additional transitions among varying antiferroelectric phases with increasing modulation periods before the final antiferroelectric-ferroelectric transition leads to the favorable multiple-loop configuration that realizes a high energy-storage performance. Such phenomenon is described by a model in terms of defect-driven phase transition. The distinctive mechanisms of multiple phase transition will inspire future composition-design for high switch-fielding antiferroelectric materials.
materials science, multidisciplinary,nanoscience & nanotechnology