Abstract:We report on a theoretical study of the electronic structures of InSb and GaSb nanowires oriented along the [001] and [111] crystallographic directions. The nanowires are described by atomistic, tight-binding models, including spin-orbit interaction. The band structures and the wave functions of the nanowires are calculated by means of a Lanczos iteration algorithm. For the [001]-oriented InSb and GaSb nanowires, the systems with both square and rectangular cross sections are considered. Here, it is found that all the energy bands are doubly degenerate. Although the lowest conduction bands in these nanowires show good parabolic dispersions, the top valence bands show rich and complex structures. In particular, the topmost valence bands of the nanowires with a square cross section show a double maximum structure. In the nanowires with a rectangular cross section, this double maximum structure is suppressed, and the top valence bands gradually develop into parabolic bands as the aspect ratio of the cross section is increased. For the [111]-oriented InSb and GaSb nanowires, the systems with hexagonal cross sections are considered. It is found that all the bands at the Γ-point are again doubly degenerate. However, some of them will split into non-degenerate bands when the wave vector moves away from the Γ-point. Although the lowest conduction bands again show good parabolic dispersions, the topmost valence bands do not show the double maximum structure. Instead, they show a single maximum structure with its maximum at a wave vector slightly away from the Γ-point. The wave functions of the band states near the band gaps of the [001]- and [111]-oriented InSb and GaSb nanowires are also calculated and are presented in terms of probability distributions in the cross sections. It is found that although the probability distributions of the band states in the [001]-oriented nanowires with a rectangular cross section could be qualitatively described by one-band effective mass theory, the probability distributions of the band states in the [001]-oriented nanowires with a square cross section and the [111]-oriented nanowires with a hexagonal cross section show characteristic patterns with symmetries closely related to the irreducible representations of the relevant double point groups and, in general, go beyond the prediction of a simple one-band effective mass theory. We also investigate the effects of quantum confinement on the band structures of the [001]- and [111]-oriented InSb and GaSb nanowires and present an empirical formula for the description of quantization energies of the band edge states in the nanowires, which could be used to estimate the enhancement of the band gaps of the nanowires as a result of quantum confinement. The size dependencies of the electron and hole effective masses in these nanowires are also investigated and discussed.

Phonon Band Structure and Electron-Phonon Interactions in Ga and Sb Nanowires: a First-Principles Study

Electronic Structures of [001]- and [111]-Oriented Insb and Gasb Free-Standing Nanowires

Lattice Dynamics of Twisted ZnO Nanowires under Generalized Born–von Karman Boundary Conditions

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Structures and Electronic Properties of the Bi−Sb Superlattice Nanowires and Core−Shell Structural Bi/Sb Nanowires

Electronic Structures of [1 1 1]-Oriented Free-Standing InAs and InP Nanowires

Dispersive Spectra And Frohlich Electron-Phonon Interaction Hamiltonians Of Full Polar Optical Phonon States In A Wurtzite Nitride Nanowire: Quantum Size Effect

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Efficient mechanical modulation of the phonon thermal conductivity of Mo 6 S 6 nanowires.

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

k.p theory of freestanding narrow band gap semiconductor nanowires

Band folding, strain, confinement, and surface relaxation effects on the electronic structure of GaAs and GaP: from bulk to nanowires

Surface Optic Phonons in Cylindrical and Rectangular Cross-Sectional Semiconducting Nanowires

Phonons in Bi2S3nanostructures: Raman Scattering and First-Principles Studies

Observation of strong phonon-phonon coupling in one-dimensional van der Waals crystals

Electronic structures of free-standing nanowires made from indirect bandgap semiconductor gallium phosphide

Monte Carlo Simulation of Single-Crystalline PbSe Nanowire Thermal Conductivity Using First-Principle Phonon Properties

First-principles calculations of the vibrational properties of bulk CdSe and CdSe nanowires

Vibration Properties of Propagating and Half-Space Optical Phonons in a Wurtzite Q1D GaN-based Quantum Wire

Extracting Band Structure Characteristics of GaSb/InAs Core-Shell Nanowires from Thermoelectric Properties

The stability and electronic properties of wurtzite and zinc-blende ZnS nanowires