Abstract:An efficient monolithically integrated light source with complementary metal-oxide-semiconductor (CMOS) compatibility remains the missing component to enable Si photonics for various applications. In particular, vertical-cavity-surface-emitting (VCSE) light sources, such as resonant cavity light-emitting diodes (RCLEDs) and vertical-cavity surface-emitting lasers (VCSELs), are strong contenders due to their compact size, circular emission profile with low beam divergence, wafer-scale fabrication compatibility, high bandwidth, and high coupling efficiency to fiber optic cables. We report the first demonstration of 8-in. wafer-scale GeSn/Ge multiple-quantum-well VCSE p-i-n structures and diodes for laser or light-emitting diode (LED) applications in Si photonics by wafer bonding and layer transfer techniques, which are challenging for all-epitaxy routes. The wafer could be 12 in. (300 mm) since the MQW gain medium is grown on a 300 mm Si wafer, and the bonding is wafer-scale. Alternative dielectric layers (SiO2/SiN/SiO2), introduced by wafer bonding, under the emitting structure, serve as the bottom mirror for the vertical cavity. The Ge0.92Sn0.08/Ge MQW layer is utilized to improve the material quality and to confine injected carriers. As a result, more than 8× enhancement of light emission due to the vertical cavity resonance was demonstrated by photoluminescence spectroscopy. Besides, the spectral purity is enhanced by the single-longitudinal-mode cavity. The intensity of light emission is insensitive to the temperature range from 4 to 300 K and even becomes stronger at higher temperatures since the stronger resonant cavity effect at higher temperatures compensates for the drop in light emission efficiency caused by nonradiative centers. The vertical cavity effect on the light emission is further verified by reflectivity spectroscopy and optical simulations. A positive gain can be achieved as indicated by optical gain calculations. Room-temperature electroluminescence and an excellent carrier injection efficiency of the MQW VCSE diode are observed, showing its potential for electrically injected RCLEDs and VCSELs.

Mid-Infrared Surface-Emitting Photonic Crystal Microcavity Light Emitter on Silicon

Optically Pumped Mid-Infrared Light Emitter on Silicon

Single Germanium Quantum Dot Embedded in Photonic Crystal Nanocavity for Light Emitter on Silicon Chip.

Mid-infrared silicon-on-sapphire waveguide coupled photonic crystal microcavities

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Electrically Pumped Epitaxially Regrown GaSb‐Based Type‐I Quantum‐Well Surface‐Emitting Lasers with Buried High‐Index‐Contrast Photonic Crystal Layer

Electroluminescence from silicon-based photonic crystal microcavities with PbSe quantum dots.

Study of Band Structure in PbSe/PbSrSe Quantum Wells for Midinfrared Laser Applications

Research on PbTe/Pb_(1-x)Sr_xTe Multi-Quantum Well Mid-Infrared Light Emitting Device

Two-dimensional heterostructure quasi-BIC photonic crystal surface-emitting laser with low divergence

Monolithic Chalcogenide Glass Waveguide Integrated Interband Cascaded Laser

Mid-Infrared Photoluminescence of Pbse/Pbsrse Multiple Quantum Wells Grown by Molecular Beam Epitaxy

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Planar Chalcogenide Glass Mid-Infrared Photonics

Compact Silicon Photonic Hybrid Ring External Cavity (Shrec)/ingasb-Algaassb Wavelength-Tunable Laser Diode Operating from 1881-1947 Nm

IaAsP/InGaAsP quantum-well 1.3 μm vertical-cavity surface-emitting lasers

An InGaAs Vertical-Cavity Surface-Emitting Laser Emitting at 1130 nm for Silicon Photonics Application

Mid-infrared interband cascade light emitting devices grown on off-axis silicon substrates

Near-band Edge Light Emission from Silicon Semiconductor on Insulator Diodes

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Metal Organic Chemical Vapor Deposition-Grown High-Power Photonic-Crystal Surface-Emitting Lasers toward L Band