Stacking Fault and Plastic Deformation Mechanism in Nano‐twinned Cu Pillar under Ultrahigh Stress
Kuan-Lin Fu,Yun-Fong Lee,Jui-Sheng Chang,Chia-Hung Lee,Po-Yu Chen,Wei-Chieh Huang,Mei-Hsin Lo,Yu-Chen Huang,Cheng-Yi Liu
DOI: https://doi.org/10.1002/adem.202400990
IF: 3.6
2024-06-22
Advanced Engineering Materials
Abstract:Nano‐twinned Cu pillar was fabricated on an as‐electroplated nano‐twinned Cu film, which preferentially grew in the {111} plane family. With a nano‐indentation device (Picoindenter), a vertical ultrahigh pressure of 5100 MPa was applied to the nano‐twinned Cu pillar. The twin lamellar grain was greatly deformed under that ultrahigh external stress. Consequently, the top surface plane was pressed into the lattice beneath to continuously form edge dislocations. Those dislocations were driven along the possible slip systems toward the outer surface of the first matrix lamella, corresponding to the plastic deformation. A dislocation‐mediated mechanism was proposed to explain the plastic deformation of the nano‐twinned Cu pillar. Three types of slip systems were identified for the created dislocations, each resulting in either the displacement on the first matrix lamellar grain or cross‐slip on the twin boundary. At the ultrahigh external pressure, as the dislocations slid through the twin boundary, they would dissociate to Shockley partial dislocations and alter the stacking sequence in the twin boundary, creating stacking faults. The resultant stacking faults in the twin boundary were observed in the TEM lattice images. This article is protected by copyright. All rights reserved.
materials science, multidisciplinary