Growth of the relaxor based ferroelectric single crystals Pb(In 1/2Nb1/2)O3-Pb(Mg1/3Nb 2/3)O3-PbTiO3 by vertical Bridgman technique

xian wang,zhuo xu,zhenrong li,fei li,hongbing chen,shiji fan
DOI: https://doi.org/10.1080/00150191003676405
2010-01-01
Ferroelectrics
Abstract:The relaxor-based ferroelectric single crystals Pb(In1/2Nb1/2)O3- Pb(Mg1/3Nb2/3)O3-PbTiO3 were grown successfully using the vertical Bridgman technique. The crystals were spontaneously nucleated and induced to grow by the seed respectively, with diameter of O25-40 mm and length of 80-170 mm. The [001]-oriented wafers of as-grown crystals showed the excellent electrical characterizations (epsilon 5500, tan1.35%, d33 1900pC/N, k330.9). Both the higher rhombohedral-tetragonal phase transition temperature (Tr/t 100-120 degrees C) and Curie temperature (Tc 170-200 degrees C) enlarged the operating temperature range of the devices. The crystals had the stable time dependence of piezoelectric properties. Therefore, the successful growth and high performance made the crystal be a promising candidate for the ultrasonic applications.
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