Microwave dielectric properties of BaO–TiO 2 –TeO 2 ternary system

Xiangquan Jiao,Chaowei Zhong,Shuren Zhang,Xingshu Liu,Bo Li
DOI: https://doi.org/10.1007/s10853-010-4352-4
IF: 4.5
2010-01-01
Journal of Materials Science
Abstract:Besides the applications as optical functional materials, tellurium oxides also have attracted interest as microwave dielectric materials. Most TeO 2 -based binary and ternary system have large negative temperature coefficient of resonant frequency (τ f ), which is not compatible for the low-temperature cofired ceramic. To compensate τ f close to zero, two single-phase predecessors of BaTe 4 O 9 and TiTe 3 O 8 are synthesized in air at 530–560 and 620–680 °C, respectively. The two predecessors show exceptional dielectric properties and their τ f are opposite. The BaO–TiO 2 –TeO 2 ternary system compounds are investigated by adjusting the ratio of BaTe 4 O 9 and TiTe 3 O 8 and sintered at 520–580 °C to develop the microwave properties and compensate the τ f . After sintered at 560 °C, the ceramic sample with the composition of 0.47BaTe 4 O 9 –0.53TiTe 3 O 8 exhibits a dielectric permittivity of 28, a Q × f -value of 12,200 GHz, and a τ f of 4.0 ppm/°C measured at 10 GHz.
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