Abstract:The synergistic effects of neutron and gamma ray radiated PNP transistors are systematically investigated as functions of the neutron fluence, gamma ray dose, and dose rate. We find that the damages show a `tick'-like dependence on the gamma ray dose after the samples are radiated by neutrons. Two negative synergistic effects are derived, both of which have similar magnitudes as the ionization damage (ID) itself. The first one depends linearly on the gamma ray dose, whose slope depends quadratically on the initial displacement damage (DD) and can be attributed to the healing of neutron-radiation-induced defects in silicon. The second one has an exponential decay with the gamma ray dose, whose amplitude shows a rather strong enhanced low-dose-rate sensitivity (ELDRS) effect and can be attributed to the passivation of neutron-induced defects near the silica/silicon interface by the gamma-ray-generated protons in silica, which can penetrate the silica/silicon interface to passivate the neutron-induced defects in silicon. The simulated results based on the proposed model match the experimental data very well, but differ from previous model, which does not assume annihilation or passivation of the displacement defects. The unraveled defect annealing mechanism is important because it implies that displacement damages can be repaired by gamma ray radiation or proton diffusion, which can have important device applications in the space or other extreme environments.

Simulation of Dark Current Increase in Si PIN Photodiode Induced by Neutron Irradiation

Simulation on Photocurrent of Si PIN Photodiode Induced by Γ Ionization Pulse Radiation

Modeling dark signal of CMOS image sensors irradiated by reactor neutron using Monte Carlo method

Theoretical and experimental study of the dark signal in CMOS image sensors affected by neutron radiation from a nuclear reactor

Numerical Simulation of SiGe HBT Irradiated by 1mev Neutron Beam

Synergistic Radiation Effects in PPD CMOS Image Sensors Induced by Neutron Displacement Damage and Gamma Ionization Damage

Simulation on CTE Reduction of CCD Induced by Neutron Irradiation

Mechanism Analysis and Experiment Simulation on Radiation Effects of CCDs

Degradation Analysis of the Pinned Photodiode CMOS Image Sensors Induced by Energetic Proton Radiation

Displacement damage effects induced by fast neutron in backside-illuminated CMOS image sensors

Study on Numerical Analysis and Experiment Simulation Approaches for Radiation Effects of Typical Optoelectronic Devices

Dark current simulation of InP/InGaAs/InP p-i-n photodiode

Simulation of Synergistic Effects on Lateral Pnp Bipolar Transistors Induced by Neutron and Gamma Irradiation

Radiation Effects in Backside-Illuminated CMOS Image Sensors Irradiated by High Energy Neutrons at CSNS-WNS

Analysis dark-current in GeSi/Si superlattice PIN photodetector

Study on Neutron Displacement Damage Effect in Phototransistor

Mechanism of Synergistic Effects of Neutron- and Gamma-Ray-Radiated PNP Bipolar Transistors

Displacement damage effects on CMOS APS image sensors induced by neutron irradiation from a nuclear reactor

Impact of γ Irradiation Damage to CMOS Image Sensor on Camera Signal-To-Noise Ratio

Study of a Neutron-Resistant P+-Si/n-zno Photodetector with Avalanching Gain

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor after Proton Irradiation