A Monolithic RF Transceiver for DC-OFDM UWB
Chen Yunfeng,Li Wei,Fu Haipeng,Gao Ting,Chen Danfeng,Zhou Feng,Cai Deyun,Li Dan,Niu Yangyang,Zhou Hanchao,Zhu Ning,Li Ning,Ren Junyan
DOI: https://doi.org/10.1088/1674-4926/33/2/025006
2012-01-01
Journal of Semiconductors
Abstract:This paper presents a first monolithic RF transceiver for DC-OFDM UWB applications. The proposed direct-conversion transceiver integrates all the building blocks including two receiver (Rx) cores, two transmitter (Tx) cores and a dual-carrier frequency synthesizer (DC-FS) as well as a 3-wire serial peripheral interface (SPI) to set the operating status of the transceiver. The ESD-protected chip is fabricated by a TSMC 0.13-mu m RF CMOS process with a die size of 4.5 x 3.6 mm(2). The measurement results show that the wideband Rx achieves an NF of 5-6.2 dB, a max gain of 76-84 dB with 64-dB variable gain, an in-/out-of-band IIP3 of -6/+4 dBm and an input loss S-11 of < -10 in all bands. The Tx achieves an LOLRR/IMGRR of -34/-33 dBc, a typical OIP3 of +6 dBm and a maximum output power of -5 dBm. The DC-FS outputs two separate carriers simultaneously with an inter-band hopping time of < 1.2 ns. The full chip consumes a maximum current of 420 mA under a 1.2-V supply.