Abstract:Understanding how foreign chemical species bond to atomic vacancies in graphene layers can advance our ability to tailor the electronic and magnetic properties of defective graphenic materials. Here we use ultra-high vacuum scanning tunneling microscopy (UHV-STM) and density functional theory to identify the precise structure of hydrogenated single atomic vacancies in a topmost graphene layer of graphite and establish a connection between the details of hydrogen passivation and the electronic properties of a single atomic vacancy. Monovacancy-hydrogen complexes are prepared by sputtering of the graphite surface layer with low energy ions and then exposing it briefly to an atomic hydrogen environment. High-resolution experimental UHV-STM imaging allows us to determine unambiguously the positions of single missing atoms in the defective graphene lattice and, in combination with the ab initio calculations, provides detailed information about the distribution of low-energy electronic states on the periphery of the monovacancy-hydrogen complexes. We found that a single atomic vacancy where each sigma-dangling bond is passivated with one hydrogen atom shows a well-defined signal from the non-bonding pi-state which penetrates into the bulk with a (\sqrt 3 \times \sqrt 3)R30^ \circ periodicity. However, a single atomic vacancy with full hydrogen termination of sigma-dangling bonds and additional hydrogen passivation of the extended pi-state at one of the vacancy's monohydrogenated carbon atoms is characterized by complete quenching of low-energy localized states. In addition, we discuss the migration of hydrogen atoms at the periphery of the monovacancy-hydrogen complexes which dramatically change the vacancy's low-energy electronic properties, as observed in our low-bias high-resolution STM imaging.

Lattice Dynamics of Hydrogen-Substituted Graphene Systems

Modeling Electronic Structure and Transport Properties of Graphene with Resonant Scattering Centers

Electronic Structure and Structural Evolutions of Hydrogenated Graphene Probed by Raman Spectroscopy

Electronic and Superconducting Properties of Hydrogenated Graphene from First-Principles Calculations

Mechanical Properties of Hydrogen Functionalized Graphyne - A Molecular Dynamics Investigation

Adsorptions of Hydrogen on Graphene and Other Forms of Carbon Structures: First Principle Calculations

The Structural and Electronic Properties of Li-doped Fluorinated Graphene and Its Application to Hydrogen Storage

Direct imaging of monovacancy-hydrogen complexes in single graphitic layer

Ab Initio Simulations of the Kinetic Properties of the Hydrogen Monomer on Graphene

The diffusion of hydrogen monomers on hole-doped graphitic lattices: Over-barrier transition and quantum tunneling

The Density Functional Tight Binding (DFTB) Approach for Investigating Vacancy and Doping in Graphene as Hydrogen Storage

Lattice Dynamics And Disorder-Induced Contraction In Functionalized Graphene

A Density Functional Theory Study of Ground and Low-Lying Excited Electronic States in Defective Graphenes

Modulating the Electronic Structures of Graphene by Controllable Hydrogenation

Direct Observation of Ordered Configurations of Hydrogen Adatoms on Graphene.

Structure and stability of hydrogenated carbon atom vacancies in graphene

Hydrogen-induced Magnetization and Tunable Hydrogen Storage in Graphitic Structures

Adsorption Configurations and Scanning Voltage Determined STM Images of Small Hydrogen Clusters on Bilayer Graphene.

Theoretical Investigation of Hydrogen Adsorption and Hydrogen Spillover on Graphene Monolayer-Supported Single Transitional Metal Atoms

A Saw-tooth Scaling of Work Function in Hydrogenated Graphene

Effects of Hydroxyl Group on H2 Dissociation on Graphene: A Density Functional Theory Study