Abstract:Addressing the carrier loss at the semiconductor-liquid junction of metal oxides is of significance for developing high-performance photoelectrodes for viable solar hydrogen generation, while one of the critical challenges remains in pursuing the top passivation layer with pronounced carrier extraction capability. In the present work, we propose and experimentally verify that artificial engineering of the passivation layer via laser embedding of p-n heterointerfaces leads to significantly improved carrier transfer. By virtue of the advantage of generating nanocrystals in any desired solvents via the technology of laser synthesis and processing of colloids (LSPC), p -type CdTe nanocrystals are successfully embedded in a thin layer of TiO2, which is adopted as an efficient passivation layer to address the excessive surface defects and the slow carrier transfer at alpha-Fe2O3 photoanodes. The embedded p-n heterointerfaces not only provide an effective built-in electric field that accelerates carrier transport in TiO2 via boosting polaron hopping but also activate hole transfer by shifting up the valence band in TiO2. Such vivid embedding is demonstrated to generate a 12-fold increase for the lifetime of photogenerated electrons, and a 3.9-fold increase for the eta inj at 1.23 VRHE, leading to a 4.4-fold increase in the photocurrent density at 1.23 VRHE. We thus believe the present work provides a universal alternative for regulating the chemical/physical features of semiconductor-liquid junctions at metal oxides.

Giant Lateral Photovoltaic Effect Observed in TiO2 Dusted Metal-Semiconductor Structure of Ti/TiO2/Si

Enhanced Lateral Photovoltaic Effect in an Improved Oxide-Metal-semiconductor Structure of TiO2/Ti/Si

Construction of TiO2 NP@TiO2 NT Double-Layered Structural Photoanode to Enhance Photovoltaic Performance of CdSe/CdS Quantum Dots Sensitized Solar Cells

Enhanced Photoelectrochemical Properties of Nanocrystalline TiO2 Electrode by Surface Sensitization with CuxO Quantum Dots.

Non-equipotential Effect Observed on the Surface of Ti/Si under Uniform Illumination

Potential Superiority of P-Type Silicon-Based Metal–Oxide–Semiconductor Structures over N-Type for Lateral Photovoltaic Effects

Large Lateral Photovoltaic Effect in Metal-(Oxide-) Semiconductor Structures

Efficient Hot Electron Extraction in Ag-Cu/TiO<sub>2</sub> for High Performance Lateral Photovoltaic Effect

Enhanced lateral photovoltaic effect observed in CdSe quantum dots embedded structure of Zn/CdSe/Si.

Improved Lateral Photovoltaic Effect of Ti and Carbon Films by Interface Modification with Single-Walled Carbon Nanotubes

Large Near-Infrared Lateral Photovoltaic Effect Observed in Co/Si Metal-Semiconductor Structures

Localized Surface Plasmon Resonances Dominated Giant Lateral Photovoltaic Effect Observed in ZnO/Ag/Si Nanostructure

Direct Observation of Lateral Photovoltaic Effect in Nano-Metal-films.

Enhanced Lateral Photovoltaic Effects in n-Si/SiO2/PEDOT:PSS Structures

Large Irreversible Lateral Photovoltaic Effect in $ \hbox{cu}_{2}\hbox{o/si}$ Heteroepitaxial Junction

Lattice distortion induced internal electric field in TiO2 photoelectrode for efficient charge separation and transfer

Heterojunction Interface-Induced Enhancement of Position-Sensitive Photodetection in the Nano-Film of Ti/SrTiO3 Based on the P-Type Silicon

Lateral Photovoltaic Effect and Electron Transport Observed in Cr Nano-Film.

Lateral Photovoltaic Effect and Magnetoresistance Observed in Co–SiO2–Si Metal–oxide–semiconductor Structures

TiO2 passivation layers with laser derived p-n heterojunctions enable boosted photoelectrochemical performance of -Fe2O3 photoanodes

Two-dimensional lateral anatase-rutile TiO 2 phase junctions with oxygen vacancies for robust photoelectrochemical water splitting