Study on the Growth Habits of AgGa1-xInxSe2 Crystals

Guo-dong ZHAO,Shi-fu ZHU,Bei-jun ZHAO,Shu-quan WAN,Bao-jun CHEN,Zhi-yu HE,Ying WANG,Yong LONG
DOI: https://doi.org/10.3969/j.issn.1000-985X.2009.02.003
2009-01-01
Abstract:Temperatures of the melting and crystallization for AgGa1-xInxSe2 with different x values were determined by using DTA. The result shows that the super cooling degrees increased as the x values increasing. And the relations between crystallization habit and temperature field of the furnace for the crystal growth were studied. It is found that solid-liquid interface of the crystal growth was removing gradually during the crystal growth process, many small hemispherical holes with regular shape appeared on the surface of as-grown crystals and there are step-like reflect planes in the bottom of holes. The step-like planes were the faces of {112} by X-ray diffraction analysis. Above mentioned results built a basis for the crystal growth of AgGa1-xInxSe2 with large size and high quality. High quality AgGa1-xInxSe2 single crystals with 20 mm in diameter and 60 mm in length were grown by an improved Bridgman method and real-time compensation temperature technique.
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