Effect of Mn<SUP>2+</SUP> doping on the lattice and the microwave dielectric properties of MgTa<sub>2</sub>O<sub>6</sub> ceramics
Liang Shi,Xueying Wang,Rui Peng,Yongcheng Lu,Cheng Liu,Dainan Zhang,Huaiwu Zhang
DOI: https://doi.org/10.1016/j.ceramint.2022.03.287
IF: 5.532
2022-01-01
Ceramics International
Abstract:A series of Mn2+-doped Mg1-xMnxTa2O6 (x = 0.02, 0.04, 0.06, 0.08, 0.10, 0.12) ceramics were synthesized by solid-state reaction method. The influence of introducing Mn-O bonds as a partial replacement for Mg-O bonds on the lattice and microwave dielectric properties was systematically investigated. XRD and Rietveld refinement confirm that Mn2+ occupies the 2a Wyckoff position and forms a pure trirutile phase. Moreover, based on the chemical bond theory, the dielectric constant is mainly affected by the ionicity of the Ta-O bond. The lattice and dielectric properties remain relatively stable with Mn2+ doping below 0.1, but excessive Mn2+ doping leads to pronounced distortion of the lattice, which is not beneficial for lattice stability and microwave dielectric properties. Introducing an appropriate amount of Mn-O bonds with high bond dissociation energy facilitates MgO6 octahedron stability, which improves the thermal stability of the lattice. Accordingly, the microwave dielectric properties for 0.06 Mn2+-doped MgTa2O6 ceramics were determined: epsilon r = 28, Q x f = 105,000 GHz (at 7.5 GHz), tau f = 19.5 ppm/degrees C.