Abstract:A monolithic silicon-on-insulator (SOI) complementary metal oxide/semiconductor (CMOS) image-detecting integrated circuit of the active-pixel-sensor type, now undergoing development, is designed to operate at visible and near-infrared wavelengths and to offer a combination of high quantum efficiency and low diffusion and capacitive cross-talk among pixels. The imager is designed to be especially suitable for astronomical and astrophysical applications. The imager design could also readily be adapted to general scientific, biological, medical, and spectroscopic applications. One of the conditions needed to ensure both high quantum efficiency and low diffusion cross-talk is a relatively high reverse bias potential (between about 20 and about 50 V) on the photodiode in each pixel. Heretofore, a major obstacle to realization of this condition in a monolithic integrated circuit has been posed by the fact that the required high reverse bias on the photodiode is incompatible with metal oxide/semiconductor field-effect transistors (MOSFETs) in the CMOS pixel readout circuitry. In the imager now being developed, the SOI structure is utilized to overcome this obstacle: The handle wafer is retained and the photodiode is formed in the handle wafer. The MOSFETs are formed on the SOI layer, which is separated from the handle wafer by a buried oxide layer. The electrical isolation provided by the buried oxide layer makes it possible to bias the MOSFETs at CMOS-compatible potentials (between 0 and 3 V), while biasing the photodiode at the required higher potential, and enables independent optimization of the sensory and readout portions of the imager.

A Vertical Integrated Diode for CMOS Color Image Sensor

A Cmos Image Sensor For Monochromatic Spectrum Imaging

A Cmos Vertically Integrated Device for Monochromatic Spectrum Detection

Multispectral Color Sensor Based on Vertically Stacked Structure

A High-resolution Colloidal Quantum Dot Imager by Monolithic Integration

Double Junction Photodiode for X-Ray Cmos Sensor Ic

SOI CMOS Imager with Suppression of Cross-Talk

Monolithic Tandem Multicolor Image Sensor Based on Electrochromic Color‐Radix Demultiplexing

Design and fabrication of vertically-integrated CMOS image sensors

Filter-free Image Sensor Pixels Comprising Silicon Nanowires with Selective Color Absorption.

Dual-mode Photosensitive Arrays Based on the Integration of Liquid Crystal Microlenses and CMOS Sensors for Obtaining the Intensity Images and Wavefronts of Objects.

Vertical Waveguides Integrated with Silicon Photodetectors: Towards High Efficiency and Low Cross-Talk Image Sensors

Vertically stacked quantum well diodes for multifunctional applications

Hybrid Organic-Si C-MOSFET Image Sensor Designed with Blue-, Green-, and Red-Sensitive Organic Photodiodes on Si C-MOSFET-Based Photo Signal Sensor Circuit

A CMOS Voltage-Mode Image Sensing System

Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%

Bias-selected Full Red/Green/Blue Color Sensing and Imaging Based on Inversely Stacked Radial PINIP Junctions

An Electrically Modulated Single‐Color/Dual‐Color Imaging Photodetector

Photodiodes for Biochip in CMOS Technology

Advancements in Dual-Function UV-Visible Light Detection

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging