Abstract:The as‐fabricated photodetector based on MoS2 QDs/3D‐graphene/Si Schottky coupled structures exhibits the ability to respond rapidly and with high sensitivity to light signals of different wavelengths. It accurately captures photon signals and converts them into electrical signals, allowing it to distinguish subtle differences within complex spectra, thereby enabling applications in high‐resolution visual imaging systems. To expand the detection capabilities of silicon (Si)‐based photodetector and address key scientific challenges such as low light absorption efficiency and short carrier lifetime in Si‐based graphene photodetector. This work introduces a novel Si‐based Schottky coupled structure by in situ growth of 3D‐graphene and molybdenum disulfide quantum dots (MoS2 QDs) on Si substrates using chemical vapor deposition (CVD) and plasma‐enhanced chemical vapor deposition (PECVD) techniques. The findings validate the "dual‐enhanced absorption" effect, enhancing the understanding of the mechanisms that improve optoelectronic performance. The synergistic effect of 3D‐graphene's natural nano‐resonant cavity and MoS2 QDs enhances light absorption efficiency and extends carrier lifetime. Introducing MoS2 QDs broadens and intensifies the built‐in electric field, promoting the separation of photogenerated electrons and holes. The photodetector exhibits a wideband light response in the wavelength range of 380–2200 nm. It stably outputs photocurrent under high‐frequency (1 kHz) modulated laser (2200 nm), with a responsivity (R) of 40 mA W−1 and detectivity (D*) of 1.15 × 109 Jones. Photodetectors show the ability to process and encrypt complex binary signals and achieve versatility in "AND" gate and "OR" gate logic operations, as well as image sensing (240 × 200 pixels).

Ultra‐High Detectivity MBene/Si vdW Schottky Photodiode for Color Single‐Pixel Imaging

A Cmos Image Sensor For Monochromatic Spectrum Imaging

Multispectral Color Sensor Based on Vertically Stacked Structure

Ti3C2Tx/Si Nanoholes Array (SiNHA) Schottky Photodiode for Filter-Free Color Single-Pixel Imaging (SPI)

High-Responsivity ZnS Schottky Barrier Photodiode Array for Ultraviolet Imaging

An Ultraviolet Photon Counting Imaging System Based on a SiC SPAD Array

Photo Detection and Modulation from 1,550 to 2,000 Nm Realized by a GeSn/Ge Multiple-Quantum-well Photodiode on a 300-Mm Si Substrate

Graphene/silicon-quantum-dots/Si Schottky-PN cascade heterojunction for short-wavelength infrared photodetection

Charge Sampling Photodetector Based on Van Der Waals Heterostructures

An Active‐Matrix Synaptic Phototransistor Array for In‐Sensor Spectral Processing

A SPAD-Based QVGA Image Sensor for Single-Photon Counting and Quanta Imaging

4H-SiC Ultraviolet Photodetector Array with Vertical MSM Configuration

Construction and Multifunctional Photonic Applications of Light Absorption‐Enhanced Silicon‐Based Schottky Coupled Structures

A High‐Speed Image Sensor Based on Large‐Area MoTe2/Si Photodiode Arrays

A 64 × 128 3D-Stacked SPAD Image Sensor for Low-Light Imaging

A 128x1 Pixels, High Dynamic Range Spad Imager In 0.18 Mu M Cmos Technology

A High‐Performance Schottky Photodiode with Asymmetric Metal Contacts Constructed on 2D Bi2O2Se

2D WS 2 Based Asymmetric Schottky Photodetector with High Performance

Junction-Optimized SPAD With 50.6% Peak PDP and 0.64 cps/μm2 DCR at 2 V Excess Bias Voltage in 130 nm CMOS

A <tex>$128\times 1$</tex> Pixels, High Dynamic Range SPAD Imager in <tex>$0.18\ \mu\text{m}$</tex> CMOS Technology

Ultraviolet photon-counting single-pixel imaging