A Monolithic 3.1-4.8 GHz MB-OFDM UWB Transceiver in 0.18-Μm CMOS
Zheng Renliang,Jiang Xudong,Yao Wang,Yang Guang,Yin Jiangwei,Zheng Jianqin,Ren Junyan,Li Wei,Li Ning
DOI: https://doi.org/10.1088/1674-4926/31/6/065007
2010-01-01
Journal of Semiconductors
Abstract:A monolithic RF transceiver for an MB-OFDM UWB system in 3.1-4.8 GHz is presented. The transceiver adopts direct-conversion architecture and integrates all building blocks including a gain controllable wideband LNA, a I/Q merged quadrature mixer, a fifth-order Gm-C bi-quad Chebyshev LPF/VGA, a fast-settling frequency synthesizer with a poly-phase filter, a linear broadband up-conversion quadrature modulator, an active D2S converter and a variablegain power amplifier. The ESD protected transceiver is fabricated in Jazz Semiconductor's 0.18-mu m RF CMOS with an area of 6.1 mm(2) and draws a total current of 221 mA from 1.8-V supply. The receiver achieves a maximum voltage gain of 68 dB with a control range of 42 dB in 6 dB/step, noise figures of 5.5-8.8 dB for three sub-bands, and an inband/ out-band IIP3 better than -4 dBm/+9 dBm. The transmitter achieves an output power ranging from -10: 7 to -3 dBm with gain control, an output P-1dB better than -7: 7 dBm, a sideband rejection about 32.4 dBc, and LO suppression of 31.1 dBc. The hopping time among sub-bands is less than 2.05 ns.