Synthetic haggite V4O6(OH)4 nanobelts: Oxyhydroxide as a new catalog of smart electrical switch materials

Changzheng Wu,Jun Dai,Xiaodong Zhang,Jinlong Yang,Yi Xie
DOI: https://doi.org/10.1021/ja9020217
IF: 15
2009-01-01
Journal of the American Chemical Society
Abstract:Synthetic haggite V4O6(OH)(4) has been successfully obtained for the first time after a delay of more than 50 years. Our careful analysis clarifies the formula of haggite as V4O6(OH)(4), rather than the long-standing known V4O4(OH)(6). The semiconductor of haggite shows a rapid increase of resistance by >10(4) orders of magnitude down to low temperatures, giving the first case of the oxyhydroxide compound showing semiconductor-insulator transitions. More intriguingly, the haggite product's nanobelt that can act as connecting units have potential in the construction of intelligent switching devices in future investigations.
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