Structural and Electronic Properties of Amorphous Semiconductors Hg0.5cd0.5te: A First-Principles Study

Liang Wang,Xiao-Shuang Chen,Xiao-Hao Zhou,Wei Lu,Ji-Jun Zhao
DOI: https://doi.org/10.1166/jctn.2009.1044
2009-01-01
Journal of Computational and Theoretical Nanoscience
Abstract:The structure of the amorphous semiconductor Hg0.5Cd0.5Te (a-Cd0.5Hg0.5Te) is obtained by the first principle molecular dynamic simulation, based on the density function theory. It is found that the coordination number of the a-Cd0.5Hg0.5Te is mainly four or three, and the structure has a higher density of wrong bond due to the disorder both topologically and chemically. The physical origin of the density of states of a-Cd0.5Hg0.5Te is discussed and given in detail. Furthermore, it is shown that the disorders in a-Cd0.5Hg0.5Te have the effect on the distribution of the density of states. It can be concluded that the band edge mostly has the characteristic of p-like states.
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