Oxygen Vacancy Mediated Conductivity and Charge Transport Properties of Epitaxial Ba0.6La0.4TiO3- Thin Films
Qiang Li,Aihua Zhang,Dong Gao,Min Guo,Jiajun Feng,Min Zeng,Zhen Fan,Deyang Chen,Xingsen Gao,Guofu Zhou,Xubing Lu,J. -M. Liu
DOI: https://doi.org/10.1063/1.5093749
IF: 4
2019-01-01
Applied Physics Letters
Abstract:We report on the effects of the oxygen vacancy (V-O) regarding the microstructure, conductivity, and charge transport mechanisms of epitaxial Ba0.6La0.4TiO3- (BLTO) films. The V-O concentration can be largely regulated from 21.5% to 37.8% by varying the oxygen pressure (P-O2) during film deposition. Resistivity-temperature and Hall effect measurements demonstrate that the BLTO films can be tuned remarkably from an insulator to a semiconductor, and even to a metallic conductor by regulating the V-O concentration. The role of V-O concentration in the charge transport mechanism is clarified. For films with low V-O concentration, the charge transport is dominated by variable range hopping (VRH) at low temperatures, and it shows small polaron (SP) hopping at high temperatures. For films with high V-O concentration, the carrier transport remains VRH at low temperatures, while it changes to SP hopping at moderate temperatures, and is dominated by thermal phonon scattering at high temperatures. Furthermore, the lower starting temperature of SP hopping for films with higher V-O concentrations indicates that V-O favors electron-phonon coupling. Different charge transport mechanisms are assumed to be due to different V-O-induced defect energy levels in the BLTO films, which has been verified by their soft x-ray absorption spectroscopy results.