Optical birefringence effects of pure spin currents in semiconductors

Renbao Liu,Jing Wang,Bangfen Zhu

DOI: https://doi.org/10.1109/QELS.2008.4552977

2008-01-01

Abstract:We predict that a pure spin current in a semiconductor, even without net magnetization, presents the Voigt and Faraday birefringence, which may be exploited for a direct, non-demolition measurement of the pure spin current.

What problem does this paper attempt to address?

Theory of Direct Optical Measurement of Pure Spin Currents in Direct-Gap Semiconductors

Jing Wang,Ren-Bao Liu,Bang-Fen Zhu

DOI: https://doi.org/10.1063/1.3295491

2009-01-01

Abstract:We predict that a pure spin current in a semiconductor may lead to the optical circular birefingence effect without invoking magnetization. This effect may be exploited for a direct, non‐destructive measurement of the pure spin current. We derive the effective coupling between a pure spin current and a polarized light beam, and point out that it originates from the inherent spin‐orbit coupling in the valence bands, rather than the Rashba or Dresselhaus effects due to inversion asymmetries. The Faraday rotation angle in GaAs is estimated, which indicates that this spin current optical birefringence is experimentally observable.
Measurement of Pure Spin Currents in Semiconductors

WANG Jing,LIU RenBao,ZHU BangFen

DOI: https://doi.org/10.1360/132011-107

2011-01-01

Abstract:A new field has emerged called spintronics (spin-based electronics), where the spin of electrons rather than the charge carries information. This may offer opportunities for a new generation of electronic devices. Measuring spin currents in semiconductors plays a key role in spintronics. In this review article, starting from the basic properties of spin currents and the current experimental techniques for spin current measurements, we briefly introduce our theory on optical effects of spin currents in the direct-gap semiconductors, i.e., the Faraday rotation and nonlinear optics, which provide a direct measurement of pure spin currents in semiconductors.
Optical Effects of Spin Currents in Semiconductors

Jing Wang,Ren-Bao Liu,Bang-Fen Zhu

DOI: https://doi.org/10.1103/physrevb.86.045215

2009-01-01

Journal of Superconductivity and Novel Magnetism

Abstract:A spin current has novel linear and second-order nonlinear optical effects due to its symmetry properties. With the symmetry analysis and the eight-band microscopic calculation we have systematically investigated the interaction between a spin current and a polarized light beam (or the "photon spin current") in direct-gap semiconductors. This interaction is rooted in the intrinsic spin-orbit coupling in valence bands and does not rely on the Rashba or Dresselhaus effect. The light-spin current interaction results in an optical birefringence effect of the spin current. The symmetry analysis indicates that in a semiconductor with inversion symmetry, the linear birefringence effect vanishes and only the circular birefringence effect exists. The circular birefringence effect is similar to the Faraday rotation in magneto-optics but involves no net magnetization nor breaking the time-reversal symmetry. Moreover, a spin current can induce the second-order nonlinear optical processes due to the inversion-symmetry breaking. These findings form a basis of measuring a pure spin current where and when it flows with the standard optical spectroscopy, which may provide a toolbox to explore a wealth of physics connecting the spintronics and photonics.
Proposal for Direct Measurement of A Pure Spin Current by A Polarized Light Beam

Jing Wang,Bang-Fen Zhu,Ren-Bao Liu

DOI: https://doi.org/10.1103/physrevlett.100.086603

IF: 8.6

2008-01-01

Physical Review Letters

Abstract:The photon helicity may be mapped to a spin-1/2, whereby we put forward an intrinsic interaction between a polarized light beam as a "photon spin current" and a pure spin current in a semiconductor, which arises from the spin-orbit coupling in valence bands as a pure relativity effect without involving the Rashba or the Dresselhaus effect due to inversion asymmetries. The interaction leads to linear and circular optical birefringence, which are similar to the Voigt effect and the Faraday rotation in magneto-optics but nevertheless involve no net magnetization. The birefringence effects provide a direct, nondemolition measurement of pure spin currents.
SPIN CURRENT AND SPIN HALL EFFECT IN SYSTEMS WITH SPIN-ORBIT COUPLING

JIN Pei-qing,LI You-quan

DOI: https://doi.org/10.3321/j.issn:1000-0542.2009.04.002

2009-01-01

Abstract:Generating,manipulating and detecting a spin current are regarded as main tasks of spintronics.Spin Hall effect provides an alternative route to generate the spin current in semiconductors without spin injection.However,the spin current does not conserve in systems with spin-orbit coupling.Recently,much attention has been absorbed on the understanding of such an issue.We review the recent research progresses on the spin current and spin Hall effect in systems with spin-orbit coupling.In terms of SU(2)gauge potentials,the naturally defined spin current obeys a covariant continuity equation.This equation plays a key role in keeping the consistency of the SU(2)Kubo formula with different gauge fixings.After introducing the SU(2)field strength tensor,the spin force that electrons experience in the presence of the SU(2)gauge fields can be easily obtained.It reduces to the Stern-Gerlach force if only the U(1)magnetic field is present.Since there are seemly less application of the extrinsic spin Hall effect which depends on the impurity scattering,more attentions were paid to the intrinsic spin Hall effect recently.In this effect,aU(1)electric field can induce a transverse spin current and lateral spin accumulations in nonmagnetic semiconductors.The spin Hall effect has been observed in both semiconductors and metals.The spin Hall conductivity is a universal constant in the clean twodimensional electron gas,while the impurity effect on this conductivity used to be quite controversial which can be resolved if the dephasing effect is considered.In this review,the spin transport in the bilayer electron gas is also discussed.Both the spin Hall conductivity and tunnelling spin conductivity exhibit resonant peaks at the energy-degeneracy point.When taking into account the difference of strengthes of impurity potentials between layers,the tunnelling spin conductivity manifests an asymmetric feature with respect to the gate voltage,i.e.,a spin diode behavior is expected to occur in this bilayer system.
Second-order nonlinear optical effects of spin currents

Wang,Jing,Liu,Ren-Bao,Zhu,Bang-Fen

DOI: https://doi.org/10.1063/1.3666561

IF: 8.6

2011-01-01

Physical Review Letters

Abstract:Pure spin currents, which carry information via spins in lieu of charges, are a key element in spintronics and signify the quantum spin Hall effect. However, they are hardly traceable as they bear neither net magnetization nor net charge currents, notwithstanding many "smoking-gun" evidences. We show that a pure spin current has measurable second-order nonlinear optical effects by symmetry analysis and microscopic calculations. These findings may be exploited for directly "seeing" spin currents in real-time and real-space with standard nonlinear optical spectroscopy.
Proposal for the Direct Optical Detection of Pure Spin Currents in Semiconductors

Jiang-Tao Liu,Kai Chang

DOI: https://doi.org/10.1103/physrevb.78.113304

2008-01-01

Abstract:We suggest a different practical scheme for the direct detection of pure spin current by using the two-color Faraday rotation of optical quantum interference process (QUIP) in a semiconductor system. We demonstrate theoretically that the Faraday rotation of QUIP depends sensitively on the spin orientation and wave vector of the carriers, and can be tuned by the relative phase and the polarization direction of the omega and 2 omega laser beams. By adjusting these parameters, the magnitude and direction of the spin current can be detected.
Pure spin current generation via photogalvanic effect with spatial inversion symmetry

Xixi Tao,Peng Jiang,Hua Hao,Xiaohong Zheng,Lei Zhang,Zhi Zeng

DOI: https://doi.org/10.1103/physrevb.102.081402

IF: 3.7

2020-08-18

Physical Review B

Abstract:We propose a new idea to generate pure spin current with photogalvanic effect (PGE) by designing devices with spatial inversion symmetry based on two-dimensional spin semiconducting materials. Due to the preservation of spatial inversion symmetry, the electric current generated by the PGE must be zero. However, finite spin-dependent current I↑/↓ may still be produced. Once an amount of spin-up electrons flow into the device region from lead α and flow out from lead β under light irradiation, the same amount of spin-down electrons will flow into the device region from lead β and flow out from lead α, which results in Icα/β=I↑α/β+I↓α/β=0 and Isα/β=I↑α/β−I↓α/β≠0 simultaneously for each lead and thus finite pure spin current arises. As a concrete example, this idea is demonstrated by calculating the PGE in a photoelectric device constructed with an armchair-edged graphene nanoribbon which is divided into two semi-infinite ribbons. The two semi-infinite ribbons are then periodically and symmetrically patterned with ferromagnetic triangle antidots in the form of “▹◃” to achieve spatial inversion symmetry of the device. We find that the pure spin current can be robustly generated, neither dependent on the photon energy and polarization/helicity angle, nor dependent on whether it is linearly, circularly, or elliptically polarized.

physics, condensed matter, applied,materials science, multidisciplinary
QUANTUM SPIN CURRENT INDUCED THROUGH OPTICAL DIPOLE TRANSITION PROCESS IN SEMICONDUCTORS

Xiong-Jun Liu,L. C. Kwek,C. H. Oh

DOI: https://doi.org/10.1142/s0217979208046037

2008-01-01

Abstract:We propose a scheme to generate quantum spin current via linear optical process. By interacting a three-level system based on the spin states of charged particles (electrons or holes in semiconductor, etc) with the angular momentum states of an optical field, we show that the dynamics of charged particles equipped with different spin polarizations are governed by different (opposite) additional effective magnetic fields. In this way, a pure dissipationless quantum spin current can be generated. No spin-orbit interaction (e.g., Rashba or Dresselhaus term) is needed in this scheme. We also calculate the effect of nonmagnetic impurities on the created spin currents and show that the vertex correction of the spin hall conductivity in the ladder approximation is exactly zero. Paper presented at NTU Spintronics Workshop, Singapore, May 2006.
Generation of spin currents via Raman scattering

Ali Najmaie,E. Ya. Sherman,J. E. Sipe,E.Ya. Sherman,J.E. Sipe

DOI: https://doi.org/10.48550/arXiv.cond-mat/0508230

2005-08-09

Mesoscale and Nanoscale Physics

Abstract:We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement.
Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect

Haowei Xu,Hua Wang,Jian Zhou,Ju Li

DOI: https://doi.org/10.1038/s41467-021-24541-7

IF: 16.6

2021-07-15

Nature Communications

Abstract:Abstract Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time $$\tau$$ τ are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi 2 Te 4 , and the surface of topological crystalline insulator cubic SnTe.

multidisciplinary sciences
Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Shibo Fang,Min Wang,Xingyue Yang,Zongmeng Yang,Qiuhui Li,Zhaochu Luo,Jing Lu

DOI: https://doi.org/10.1103/PhysRevB.109.195202

IF: 3.7

2024-01-01

Physical Review B

Abstract:Spin photogalvanic effect is a nonlinear effect that can generate spin currents through optical excitation in intrinsic semiconductors without parity inversion symmetry. The efficient control of the spin photogalvanic effect is of great significance for the research of computing -in -memory devices. In this work, we investigate the ferroelectric modulation of the spin photogalvanic effect in two-dimensional (2D) van der Waals (vdW) ferroelectric semiconductors with spin -orbit coupling, including the in -plane, out -of -plane, and in-plane/outof-plane-coupled ferroelectrics. We provide the general form of the spin photogalvanic effect controlled by ferroelectricity in 2D vdW spin -orbit coupling ferroelectric semiconductors by the second -order perturbation theory. In the in -plane ferroelectrics excited by circularly polarized light, we discover an effect where the reversal of the ferroelectric polarization will maintain the spin current unchanged but change the direction of the charge current. We name this effect the hidden spin current modulation. Using first -principles quantum transport simulation, we validate our theory with three cases of the black phosphorus -like Bi (in -plane ferroelectric), monolayer alpha -GeTe (out -of -plane ferroelectric), and alpha -In 2 Se 3 (in -plane and out -of -plane coupled ferroelectric). Our study paves the way for the research of next -generation low -dimensional computing -in -memory devices.
Pure spin current phenomena

S. Y. Huang,D. Qu,T. C. Chuang,C. C. Chiang,W. Lin,C. L. Chien

DOI: https://doi.org/10.1063/5.0032368

IF: 4

2020-11-09

Applied Physics Letters

Abstract:Spintronic phenomena and devices have evolved from exploiting spin-polarized current to pure spin current. A pure spin current can more efficiently deliver spin angular momentum with fewer or no charge carriers, enabling spin–orbit torque switching in ferromagnets. The prospects of antiferromagnetic spintronics, especially electrical switching, remain perplexing and controversial. We describe some recent advances, outstanding issues, challenges, and prospects of pure spin current.

physics, applied
Intrinsic Spin Photogalvanic Effect in Nonmagnetic Insulator

Ruixiang Fei,Xiaobo Lu,Li Yang

DOI: https://doi.org/10.48550/arxiv.2006.10690

2020-01-01

Abstract: We show that with the help of spin-orbit coupling, nonlinear light-matter interactions can efficiently couple with spin and valley degrees of freedom. This revealed spin photogalvanic effect can generate the long-time pursued intrinsic pure spin current (PSC) in non-centrosymmetric nonmagnetic insulators. Different from the spin and valley Hall effect, such a photo-driven spin current is universal and can be generated without external bias field. Using first-principles simulation, we study monolayer transition metal dichalcogenides (TMDs) to demonstrate this effect and confirm an enhanced PSC under linearly polarized photoexcitation. The amplitude of the PSC is one order larger than that of the charge current observed in monolayer TMDs. This exotic nonlinear light-spin interaction indicates that light can be utilized as a rapid fashion to manipulate the spin-polarized current, which is crucial for future low-dissipation nanodevices.
Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces

V. V. Osipov,V. N. Smelyanskiy,A. G. Petukhov

DOI: https://doi.org/10.48550/arXiv.cond-mat/0506625

2005-06-24

Other Condensed Matter

Abstract:We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when these coefficients only weakly depend on the current. The effect of complete spin extraction occurs at relatively strong electric fields and arises from a reduction of spin penetration length due to the drift of electrons from a semiconductor towards the spin-selective tunnel junction.
Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead

Yuan Li,Ru Bai,Dexuan Huo,Zhenghong Qian

DOI: https://doi.org/10.1088/1742-6596/263/1/012019

2011-01-01

Journal of Physics Conference Series

Abstract:We investigate the spin-bias-induced transport through a quantum dot coupled to a ferromagnetic lead and a nonmagnetic semiconductor lead. Electron transport through this quantum dot is analyzed theoretically by means of the master equation method. It is shown that the polarization direction and the magnitude of the spin bias can be detected through adjusting the energy level of the quantum dot. The effects of the temperature and the tunneling rates on the charge current are also investigated numerically. The spin-bias-induced current can be easily measured in systems with low temperature and high tunneling rates. Even though the tunneling rate is small due to the conductance mismatch between the quantum dot and the ferromagnetic lead, the spin bias can still be detected through measuring the charge current.
Thermally Driven Pure Spin Current Through Mesoscopic Ferromagnetic Semimetal-Normal Metal Junctions

W. Chen,Z. Z. Zhang,L. Jiang,Z. W. Xing,R. Shen,B. G. Wang

DOI: https://doi.org/10.1140/epjb/e2012-30320-y

2012-01-01

Abstract:The thermally driven spin transport through mesoscopic ferromagnetic semimetal-normal metal junctions is investigated. A pure spin current can be enforced by the spin-polarised semimetal band structure and the spin current increases with increasing either the temperature bias or the equilibrium temperature in the ballistic transport regime. It is also found that the sign of the spin current can be inverted by a strong spin-flip barrier at the interface of the junction.
Quantum Spin Current Induced Through Optical Fields

Xiong-Jun Liu,Xin Liu,L. C. Kweka,C. H. Oh,Mo-Lin Ge

2005-01-01

Abstract:We propose a scheme to generate quantum spin current via optical dipole transition process. By coupling a three-level system based on the spin states of charged particles (electrons or holes in semiconductor) to the angular momentum states of the radiation, we show that a pure quantum spin current can be generated. No spin-orbit interaction is needed in this scheme. We also calculate the effect of nonmagnetic impurities on the created spin currents and show that the vertex correction of the spin hall conductivity in the ladder approximation is exactly zero.
Electron Interaction Effects on Spin Injection into Semiconductors

Yue Yu,Jinbin Li,S. T. Chui

2002-01-01

Abstract:We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge distribution in the semiconductor. When the ferromagnet-semiconductor interface resistance is comparable to the semiconductor resistance, the magnetoresistance ratio of this junction can be greatly enhanced under appropriate doping when the space charge effect in the nonequilibrium transport processes is taken into consideration.
Current-induced spin orientation in semiconductors and low-dimensional structures

N.S. Averkiev,I.A. Kokurin

DOI: https://doi.org/10.1016/j.jmmm.2016.12.059

2017-06-14

Abstract:We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.

Mesoscale and Nanoscale Physics

Optical birefringence effects of pure spin currents in semiconductors

Theory of Direct Optical Measurement of Pure Spin Currents in Direct-Gap Semiconductors

Measurement of Pure Spin Currents in Semiconductors

Optical Effects of Spin Currents in Semiconductors

Proposal for Direct Measurement of A Pure Spin Current by A Polarized Light Beam

SPIN CURRENT AND SPIN HALL EFFECT IN SYSTEMS WITH SPIN-ORBIT COUPLING

Second-order nonlinear optical effects of spin currents

Proposal for the Direct Optical Detection of Pure Spin Currents in Semiconductors

Pure spin current generation via photogalvanic effect with spatial inversion symmetry

QUANTUM SPIN CURRENT INDUCED THROUGH OPTICAL DIPOLE TRANSITION PROCESS IN SEMICONDUCTORS

Generation of spin currents via Raman scattering

Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect

Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling

Pure spin current phenomena

Intrinsic Spin Photogalvanic Effect in Nonmagnetic Insulator

Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces

Spin-bias-induced Transport Through a Quantum Dot Coupled to a Ferromagnetic Lead

Thermally Driven Pure Spin Current Through Mesoscopic Ferromagnetic Semimetal-Normal Metal Junctions

Quantum Spin Current Induced Through Optical Fields

Electron Interaction Effects on Spin Injection into Semiconductors

Current-induced spin orientation in semiconductors and low-dimensional structures