N.S. Averkiev,I.A. Kokurin
Abstract:We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena, such as spin Hall effect, inverse spin Hall effect and other are discussed. Our recent results in this field are presented as well.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is **the mechanism and characteristics of current - induced spin polarization (CISP) in semiconductors and low - dimensional structures**. Specifically, the paper focuses on:
1. **The role of spin - orbit coupling (SOC)**: Spin - orbit coupling is a relativistic effect that links spin to the electric field. This effect is the basis of modern semiconductor spintronics.
2. **Spin polarization phenomena in semiconductors of different dimensions**:
- **Bulk - material semiconductors**: For example, telluride (Te), whose band structure results in non - zero spin polarization when the current is in a specific direction.
- **Two - dimensional (2D) structures**: Such as quantum wells (QW), which achieve spin polarization through the Rashba and Dresselhaus spin - splitting mechanisms.
- **Quasi - one - dimensional (quasi - 1D) structures**: Such as quantum wires, especially in the case of multi - sub - band occupation, spin polarization is caused by inter - sub - band scattering.
3. **Spin Hall effect (SHE) and inverse spin Hall effect (ISHE)**: These effects are closely related to CISP but have significant differences. SHE is manifested as the spatial separation of carrier spins, while CISP is a uniform spin polarization inside the sample.
4. **Symmetry analysis**: The paper discusses the influence of different crystal symmetries on spin polarization, especially for gyrotropic materials, the relationship between spin and current is determined by point - group symmetry.
5. **Experimental measurement techniques**: The paper introduces several techniques for measuring CISP, including Faraday rotation, Kerr effect, etc.
### Formula summary
1. **The relationship between spin polarization and current density**:
\[
S_i=\sum_k Q_{ik}j_k, \quad i,k = x,y,z
\]
where \( S_i \) is the average spin pseudo - vector, \( j_k \) is the current density vector, and \( Q_{ik} \) is a second - order pseudo - tensor.
2. **Quasi - momentum shift**:
\[
\hbar k_{dr}=eE\tau
\]
where \( E \) is the electric field strength and \( \tau \) is the momentum relaxation time.
3. **Average spin estimation**:
\[
S = \frac{\hat{\beta}k_{dr}}{\langle E \rangle}, \quad r\sim1
\]
where \( \langle E \rangle \) is the characteristic energy and \( r \) is a parameter depending on the specific scattering mechanism.
4. **Spin polarization in quasi - one - dimensional structures**:
\[
S_{1D}\sim\frac{eE\Delta\alpha\tau_{1D}}{\mu^2}
\]
where \( \tau_{1D} \) is the momentum relaxation time in one - dimensional structures, \( \Delta \) is the energy difference between the ground state and the first excited sub - band, and \( \alpha \) is the Rashba coupling strength.
### Conclusion
This paper aims to comprehensively overview the theoretical and experimental progress of current - induced spin polarization (CISP) in semiconductor structures of different dimensions, and explores the influence of spin - orbit coupling, symmetry, and scattering mechanisms on CISP.