Abstract:Quantum tunnelling (QTN) devices show a promising future for energy saving and ultrafast operation thanks to the unprecedented development of two-dimensional materials. However, the immature techniques for device fabrication hamper severely their further progress and application. To overcome such a challenge, the abundant processing technology used in semiconductor electronics is worth considering. Herein, a device prototype is fabricated based on band engineering to enable flexible control of QTN probability (TP) within a III-V semiconductor multilayer. While the initial heights of all barriers are set to obtain similar TPs under no bias, the conduction band slopes of InGaSb and AlSb barriers are modulated to a state where their TPs vary reversely under electric fields. On this basis, revealed by in situ bias electron holography, a unidirectional accumulation of electrons has been realized inside the multilayer structure. Moreover, the inevitable element segregation/diffusion during device growth plays a key role in band structure optimization, which is confirmed by strain analysis. The feasibility of the above modulation strategy is also confirmed by theoretical simulations. Our findings might provide a new perspective on the innovation of semiconductor devices and the application of QTN effect.

Spin-dependent Tunnelling Through an Indirect Double-Barrier Structure

Spin Filtering in the Double-Barrier Structure

Ab-initio calculations of spin tunneling through an indirect barrier

Spin Filtering Through Multi- -Magnetic-barrier Structures

Spin-polarized Charge Transport Through a Single Barrier in HgTe/CdTe Heterostructure Interface

Resonant spin transport through a superconducting double barrier structure

Resonant Tunneling of Holes in GaMnAs-Related Double-Barrier Structures

Electron Tunneling Through a Planar Single Barrier in HgTe Quantum Wells with Inverted Band Structures

Spin Polarization Through Resonant Tunnelling in a Magnetic Double-Barrier and Double-Well Quantum Structure

Electronic Transport in Nanostructures Consisting of Magnetic Barriers.

Spin Dependent Resonant Electron Tunneling Through Planar Graphene Barriers

Resonant Tunneling in Double-Barrier Structures under Transverse Magnetic Field

Resonant Tunneling of Holes in Double-Barrier Structures in the Presence of an In-Plane Magnetic Field

A Theoretical Study of Resonant Tunnelling in the Double-Barrier Structure

Coupling Between the Transverse and Longitudinal Components of an Electron in Resonant Tunneling

Control of Electron Tunnelling by Fine Band Engineering of Semiconductor Potential Barriers.

Electron Tunneling Through Double Magnetic Barriers On The Surface Of A Topological Insulator

Barrier Tunneling of Quasiparticles in Double-Weyl Semimetals

Giant Spin-Orbit Splitting in Inverted Inas/Gasb Double Quantum Wells

Quantum Pumping With Adiabatically Modulated Barriers In Three-Band Pseudospin-1 Dirac-Weyl Systems

Spin transmission in a series of magnetic barrier structure