Strain Induced Magnetoelectric Coupling Between Magnetite and BaTiO3

H. F. Tian,T. L. Qu,L. B. Luo,J. J. Yang,S. M. Guo,H. Y. Zhang,Y. G. Zhao,J. Q. Li
DOI: https://doi.org/10.1063/1.2844858
IF: 4
2008-01-01
Applied Physics Letters
Abstract:Magnetite (Fe3O4) thin films have been grown on ferroelectric BaTiO3 (BTO) single crystal substrates by pulsed laser deposition. Transmission-electron microscope observations demonstrate the orientation relationship between Fe3O4 and BTO as [400]Fe3O4∥[200]BTO and [004]Fe3O4∥[002]BTO. Experimental measurements of magnetization, coercivity and remanent magnetization of the films show abrupt jumps at around phase transition temperatures of BTO and opposite jump signs are observed for the in-plane and out-of-plane measurements. The magnetization jumps can be suppressed by a strong external magnetic field. These results were discussed in terms of the interface strain induced changes of magnetic domain structure in the Fe3O4 film. This work demonstrates the presence of strong magnetoelectric coupling between Fe3O4 and BTO.
What problem does this paper attempt to address?