Abstract:We have constructed a versatile low-temperature scanning near-field optical microscope (LTSNOM) with the capability of near-field imaging and spectroscopy, operating at liquid nitrogen (LN) temperature. A sample is illuminated either electronically or optically by introducing a laser beam through specially designed coaxial double lenses and an optical fiber. The detected optical signal is transmitted via a fiber tip to a photoelectric multiplier tube (PMT) or a spectrometer. Shcai-force detection by using a tuning-fork technique is applied to maintain the tip-sample distance. A shear-force topographic image, an optical image and a local spectrum can be obtained simultaneously. The whole scanning head is enclosed inside a container which is immersed in liquid nitrogen in a storage Dewar during the measurement. We have used this LT-SNOM to study the electroluminescence (EL) properties of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs), at both room temperature and liquid nitrogen temperature. Low-temperature experiments with the LT-SNOM show the stability of our construction and stable image acquisition at LN temperature. The results show that at room temperature the EL intensity distribution is quite inhomogeneous with islands like bright spots, and at LN temperature the EL intensity increased dramatically and the inhomogeneity reduced greatly. Furthermore, the near-field spectra, show a peak at a higher photon energy at around 2.95 eV at low temperature, in addition to the 2.7 eV peak observed by far field at room temperature. The results indicate that the self-organized In rich regions play a key role in the EL properties of these LEDs, which act as radiation recombination centers. In conjunction with near-field spectroscopy, the possible mechanism of this phenomenon is explained in terms of irradiative recombination in the MQWs; as well as the quantum-confined Starks effect.

Single-Photon-Emitting Diode at Liquid Nitrogen Temperature

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

High-Duty-Cycle Operation of GaAs/AlGaAs Quantum Cascade Laser above Liquid Nitrogen Temperature

Low-Temperature Scanning Near-Field Optical Microscope and Spectroscopy: Application in Quantum Well Device

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures

Study of Temperature Dependent Electroluminescence of InGaN/GaN Multiple Quantum Wells Using Low Temperature Scanning Near-Field Optical Microscopy

A solid-state source of single and entangled photons at diamond SiV$^-$-center transitions operating at 80K

Photophysics of Intrinsic Single-Photon Emitters in Silicon Nitride at Low Temperatures

High-Power and Low-Threshold-Current-Density GaAs/AlGaAs Quantum Cascade Lasers

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

A unipolar quantum dot diode structure for advanced quantum light sources

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Single-photon Interference Based on a Single InAs Quantum Dot

Low-noise GaAs quantum dots for quantum photonics

A gallium nitride single-photon source operating at 200 K

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Room temperature single-photon emitters in silicon nitride

Brightness and purity of a room-temperature single-photon source in the blue-green range

Single-photon emission from the natural quantum dots in the InAs/GaAs wetting layer

Single quantum dot spectroscopy using a fiber taper waveguide near-field optic