Generating spectral-efficient duobinary data format from silicon ring resonator modulators

Lin Zhang,Muping Song,Jeng-Yuan Yang,Wei-Ren Peng

DOI: https://doi.org/10.1109/ECOC.2008.4729212

2008-01-01

Abstract:Two types of ultra-small silicon microring-based duobinary modulators are proposed and compared. Required drive voltage is as low as 0.77 volt. at 10 Gb/s. Extinction ratio is > 15 dB.

What problem does this paper attempt to address?

High-speed silicon modulator based on cascaded microring resonators.

Yingtao Hu,Xi Xiao,Hao Xu,Xianyao Li,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.015079

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed silicon modulator based on cascaded double microring resonators is demonstrated in this paper. The proposed modulator experimentally achieved 40 Gbit/s modulation with an extinction ratio of 3.9 dB. Enhancement of the modulator achieves with an ultra-high optical bandwidth of 0.41 nm, corresponding to 51 GHz, was accomplished by using cascaded double ring structure. The described modulator can provides an ultra-high-speed optical modulation with a further improvement in electrical bandwidth of the device. (c) 2012 Optical Society of America
High-Baudrate Silicon Photonics Ring Resonator Modulators for Short-Reach Applications

Oskars Ozolins,Armands Ostrovskis,Aleksandrs Marinins,Toms Salgals,Michael Koenigsmann,Benjamin Krüger,Fabio Pittalà,Ints Murans,Arvids Sedulis,Kristaps Rubuls,Dilan Enrique Ortiz Blanco,Ryan P. Scott,Hansjoerg Haisch,Mahdieh Joharifar,Richard Schatz,Lu Zhang,Jurgis Porins,Sandis Spolitis,Xianbin Yu,Markus Gruen,Hadrien Louchet,Vjaceslavs Bobrovs,Xiaodan Pang

DOI: https://doi.org/10.1109/ACP/POEM59049.2023.10368959

2023-01-01

Abstract:We demonstrate up to 160 Gbaud on-off keying with first ring resonator modulator and up to 128 Gbaud on-off keying with second ring resonator modulator. Both modulators achieve performance below 6.25% OH HD-FEC threshold.
Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Xi Xiao,Hao Xu,Xianyao Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/CLEOPR.2013.6600260

2013-01-01

Abstract:Compact and high-speed silicon microring and Mach-Zehnder modulators are presented. Low-power serial 60 Gbit/s and 4λ×50 Gbit/s modulations are both experimentally demonstrated.
Monolithic Modulator and Demodulator of Differential Quadrature Phase-Shift Keying Signals Based on Silicon Microrings.

Lin Zhang,Jeng-Yuan Yang,Yunchu Li,Muping Song,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1364/ol.33.001428

IF: 3.6

2008-01-01

Optics Letters

Abstract:Silicon microring resonators are proposed to achieve ultrasmall differential quadrature phase-shift keying modulators and demodulators operated at 20 Gb/s, which may require a dramatically reduced chip size. The modulators are characterized in terms of the carrier transit time and misalignment of the driving signals, while the demodulation performance is analyzed in terms of the bandwidth and frequency detuning of the demodulator. A bit-error rate of <10(-9) is achieved using all microring-based devices in the back-to-back case.
Coupled-ring-resonator-based silicon modulator for enhanced performance.

Yunchu Li,Lin Zhang,Muping Song,Bo Zhang,Jeng-Yuan Yang,Raymond G Beausoleil,Alan E Willner,P Daniel Dapkus

DOI: https://doi.org/10.1364/OE.16.013342

IF: 3.8

2008-01-01

Optics Express

Abstract:A compact silicon coupled-ring modulator structure is proposed. Two rings are coupled to each other, and only one of these rings is actively driven and over-coupled to a waveguide, which enables high modulation speed. The resultant notch filter profile is steeper than that of the single ring and has exhibited a smaller resonance shift and lower driving electrical power. Simulations show that: (i) potentially 60-Gb/s non-return-to-zero (NRZ) data modulation with over 20-dB extinction ratio can be achieved by shifting the active ring by a 20 GHz resonance shift, (ii) the frequency chirp of the modulated signals can be adjusted by varying the coupling coefficient between the two rings, and (iii) dispersion tolerance at 0.5-dB power penalty is extended from 18 to 85 ps/nm, for a 40-Gb/s NRZ signal. (C) 2008 Optical Society of America.
Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

Wang Fan,Qiu Chen,Xiao Si-Miao,Hao Yin-Lei,Jiang Xiao-Qing,Wang Ming-Hua,Yang Jian-Yi

DOI: https://doi.org/10.1088/0256-307x/26/10/104206

2009-01-01

Chinese Physics Letters

Abstract:Optical ring-resonator-based modulators are fabricated on the silicon-on-insulator material through the mature commercial 0.8 mu m complementary metal oxide semiconductor foundry. The device configuration is based on a single ring resonator coupled to one bus waveguide. The waveguide widths are about 1 mu m. The p-i-n junctions are employed to inject currents. The experimental result shows that the ring resonators with the quality factor of above 40000 are obtained. The maximum extinction ratio of the modulators is larger than 10dB. The speed is tens of nanoseconds, and the corresponding injected current is smaller than 10 mA.
44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

Xi Xiao,Xianyao Li,Hao Xu,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/lpt.2012.2213244

IF: 2.6

2012-01-01

IEEE Photonics Technology Letters

Abstract:We experimentally demonstrate silicon microring modulators with >40-Gb/s modulation speed based on the carrier-depletion mechanism in reverse-biased PN junctions. A novel zigzag PN junction providing a modulation efficiency of 3.85 x 10(-5)/V and a resistance-capacitance bandwidth of 51 GHz is proposed and demonstrated. The moderate Q factor of similar to 8 000 and the operation wavelength detuning are optimized to relieve photon-lifetime-induced bandwidth limitation. Finally, with a voltage swing of 3 V, high-speed modulation of 20 and 44 Gb/s is experimentally demonstrated with the extinction ratio of 3.45 and 3.01 dB, showing great potential in the application of ultrahigh-capacity optical interconnects.
High-speed Silicon Modulators for the 2 Μm Wavelength Band

Wei Cao,David Hagan,David J. Thomson,Milos Nedeljkovic,Callum G. Littlejohns,Andy Knights,Shaif-Ul Alam,Junjia Wang,Frederic Gardes,Weiwei Zhang,Shenghao Liu,Ke Li,Mohamed Said Rouifed,Guo Xin,Wanjun Wang,Hong Wang,Graham T. Reed,Goran Z. Mashanovich

DOI: https://doi.org/10.1364/optica.5.001055

IF: 10.4

2018-01-01

Optica

Abstract:The 2 mu m wavelength band has become a promising candidate to be the next communication window. We demonstrate high-speed modulators based on a 220 nm silicon-on-insulator platform working at a wavelength of 1950 nm, using the free carrier plasma dispersion effect in silicon. A Mach-Zehnder interferometer modulator and a microring modulator have been characterized. At 1950 nm, the carrier-depletion modulator operates at a data rate of 20 Gbit/s with an extinction ratio of 5.8 dB and insertion loss of 13 dB. The modulation efficiency (V-pi (.) L-pi) is 2.68 V(.)cm at 4 V reverse bias. The device operation is broadband, and we also characterize its performance at 1550 nm. At 1550 nm, an open eye is obtained at 30 Gbit/s. The difference in bandwidth is caused by the bandwidth limit of the 2 mu m measurement setup. We also show a ring modulator paired with a low power integrated driver working in hybrid carrier depletion and injection mode at a data rate of 3 Gbit/s with power consumption of 2.38 pJ/bit in the 2 mu m wavelength range. This work is a proof of principle demonstration and paves a route toward a full silicon-based transceiver in the 2 mu m window. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.
A high-speed silicon modulator based on an embedded-ring-resonator structure

Lin Zhang,Muping Song,Raymond G. Beausoleil,Alan Eli Willner

DOI: https://doi.org/10.1364/nfoec.2009.jwa25

2009-01-01

Abstract:An embedded-ring-based modulator is proposed for 40-Gb/s signal generation, with compact chip-size and enhanced tolerance to cavity loss and fabrication-induced coupling variation. The modulated signal with negative chirp exhibits penalty-free transmission of 6.5 km, with a drive voltage lower by 40%.
25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

Xi Xiao,Hao Xu,Xianyao Li,Yingtao Hu,Kang Xiong,Zhiyong Li,Tao Chu,Yude Yu,Jinzhong Yu

DOI: https://doi.org/10.1364/OE.20.002507

IF: 3.8

2012-01-01

Optics Express

Abstract:A high-speed depletion-mode silicon-based microring modulator with interleaved PN junctions optimized for high modulation efficiency and large alignment tolerance is demonstrated. It is fabricated using standard 0.18 μm complementary metal-oxide-semiconductor processes and provides low V(π)L(π)s of 0.68 V·cm to 1.64 V·cm with a moderate doping concentration of 2 × 10(17) cm(-3). The measured modulation efficiency decreases by only 12.4% under ± 150 nm alignment errors. 25 Gbit/s non-return-zero modulation with a 4.5 dB extinction ratio is experimentally realized at a peak-to-peak driving voltage of 2 V, demonstrating the excellent performance of the novel doping profile.
60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Xi Xiao,Hao Xu,Xianyao Li,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1364/ofc.2013.ow4j.3

2013-01-01

Abstract:We present 60 Gbit/s silicon MZI and microring modulators with the PN junctions and electrodes designed for improved modulation efficiency and high speed. WDM modulations of 4×50 Gbit/s have also been demonstrated based on microring modulators.
Enhanced Performance and Flexibility in Silicon Modulators Based on a Coupled-Ring-Resonator Structure

yunchu li,lin zhang,muping song,yang yue,raymond g beausoleil,alan e willner

DOI: https://doi.org/10.1109/OFC.2008.4528064

2008-01-01

Abstract:We propose a high-speed (up to 30 Gb/s) silicon-based coupled-ring modulator that requires small resonance shift and achieves high extinction ratio compared with conventional single ring modulator. Optimized chirp enables reach extension at 1 dB power penalty from 6 to 22 km for 20 Gb/s NRZ data transmission.
Silicon-Based Microring Resonator Modulators for Intensity Modulation

Lin Zhang,Yunchu Li,Jeng-Yuan Yang,Muping Song,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1109/jstqe.2009.2027816

IF: 4.9

2009-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:We numerically analyze the characteristics of silicon-based microring modulators consisting of a single-ring resonator. Performance of the devices as digital intensity modulators is examined in terms of extinction ratio, pulsewidth, frequency chirp, spectral broadening, and signal quality. Three types of the modulators built in single-waveguide under-/overcoupling and dual-waveguide configurations are discussed. We show that cavity dynamics significantly affect the modulation properties. Data transmission performance over single-mode fibers is also presented. A silicon microring modulator with negative chirp could achieve 0.8 dB power penalty in 80-km fiber transmission without dispersion compensation.
Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Zhuo Cheng,Bigeng Chen,Chunlei Sun,Maoliang Wei,Shaoliang Yu,Lan Li,Hongtao Lin,Yunjiang Rao

DOI: https://doi.org/10.1109/acp55869.2022.10089079

2022-01-01

Abstract:A 5 th -order coupled microring electro-optical modulator with PIN structures is proposed and experimentally demonstrated on SOI integrated photonics platform. Ultra-high dynamic extinction ratio (ER) up to 60 dB is achieved benefiting from the high-order optical band-pass filter design. The device size on chip is only 400×220 μm 2 including electrodes and the driving voltage is 2.1 V corresponding to 0.23 W power consumption. Such integrated modulators would be promising in building compact and low-power distributed optical fiber sensing systems using low-background-noise optical pulses.
Silicon Microring-Based Signal Modulation for Chip-Scale Optical Interconnection

Lin Zhang,Yunchu Li,Muping Song,Jeng-Yuan Yang,Raymond G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1007/s00339-009-5119-0

2009-01-01

Abstract:Electro-optic modulation plays a critical role in implementing space-, power- and spectrally efficient optical interconnection for high-capacity computing systems. Microring resonators exhibit a great potential to achieve compact, low power-consumption and high-speed modulators. In this paper, we briefly review our efforts on designing and analyzing the microring modulators. Three types of single-ring modulators are discussed, from device behavior to possible system impact. We then present two novel double-ring modulators in which a passive ring resonator is added, enabling higher operation speed and lower power consumption. We also describe an opportunity of introducing phase modulation data formats into the on-chip communication environment. In this paper, our emphasis is placed on linking the devices’ physics to their system performance and providing potential technical solutions to physical-layer challenges of optical interconnection.
Large 10-Db Bandwidth And Low Insertion Loss Silicon Dual-Ring Modulator

Hongxia Zhang,Xinhong Jiang,Ciyuan Qiu

DOI: https://doi.org/10.1109/acp.2018.8596237

2018-01-01

Abstract:A silicon dual-ring modulator with 10-dB bandwidth of 0.08 nm and low insertion loss of 1.1 dB is experimentally demonstrated. The modulation speed of the dual-ring modulator can be as high as 20 Gb/s.
Generation of high-modulation-index RF analog signals using a silicon microring resonator

Muping Song,Lin Zhang,Jengyuan Yang,Raymond G. Beausoleil,Alan Eli Willner

DOI: https://doi.org/10.1109/LEOS.2008.4688466

2008-01-01

Abstract:We propose a compact silicon microring-based analog modulator for generation of 10-GHz sub-octave analog signals, which exhibit high optical modulation-index of up to 46% and carrier-to-noise ratio (CNR) of 57 dB. In fiber transmission, the CNR can be improved further by 10 dB with chromatic dispersion ©2008 IEEE.
Ultra Small Modulator and Demodulator for Differential Phase-Shift-Keying Data Format Based on Silicon Microring

Lin Zhang,Jengyuan Yang,Muping Song,Yunchu Li,Ro Zhang,Ray G. Beausoleil,Alan E. Willner

DOI: https://doi.org/10.1109/leos.2007.4382678

2007-01-01

Abstract:Proposed microring-based modulator and demodulator of DPSK data format can be a thousand times smaller than conventional scheme (Mach-Zehnder modulator + delay interferometer). With optimized Q-factor of 22000, back-to-back power penalty is diminished to 0.8-dB.
High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

Xi Xiao,Xianyao Li,Hao Xu,Zhiyong Li,Tao Chu,Jinzhong Yu,Yude Yu

DOI: https://doi.org/10.1109/ipcon.2012.6358589

2012-01-01

Abstract:We present a compact silicon microring modulator with record modulation speed. A novel zigzag PN junction is designed for high efficiency and high bandwidth. 44 Gbit/s NRZ modulation is demonstrated with 3 dB extinction ratio.
Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 μm waveband

Xi Wang,Jianing Wang,Yong Yao,Shumin Xiao,Qinghai Song,Ke Xu

DOI: https://doi.org/10.1364/ol.518729

IF: 3.6

2024-03-15

Optics Letters

Abstract:Significantly increased interests have been witnessed for the 2 µm waveband which is considered to be a promising alternative window for fiber and free-space optical communications. However, the less mature device technology at this wavelength range is one of the primary obstacles toward practical applications. In this work, we demonstrate an efficient and high-speed silicon modulator based on carrier depletion in a coupling tunable resonator. A benchmark high modulation efficiency of 0.75 V·cm is achieved. The 3-dB electro-optic bandwidth is measured to be 26 GHz allowing for up to 34 Gbit/s on–off keying modulation with a low energy consumption of ∼0.24 pJ/bit. It provides a solution for the silicon modulator with high-speed and low power consumption in the 2-µm waveband.

optics

Generating spectral-efficient duobinary data format from silicon ring resonator modulators

High-speed silicon modulator based on cascaded microring resonators.

High-Baudrate Silicon Photonics Ring Resonator Modulators for Short-Reach Applications

Compact and power-efficient silicon modulators Beyond 60 Gbit/s

Monolithic Modulator and Demodulator of Differential Quadrature Phase-Shift Keying Signals Based on Silicon Microrings.

Coupled-ring-resonator-based silicon modulator for enhanced performance.

Optical Ring-Resonator Modulator Based on 0.8 Μm CMOS Technology

44-Gb/s Silicon Microring Modulators Based on Zigzag Pn Junctions

High-speed Silicon Modulators for the 2 Μm Wavelength Band

A high-speed silicon modulator based on an embedded-ring-resonator structure

25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions.

60 Gbit/s Silicon Modulators with Enhanced Electro-Optical Efficiency

Enhanced Performance and Flexibility in Silicon Modulators Based on a Coupled-Ring-Resonator Structure

Silicon-Based Microring Resonator Modulators for Intensity Modulation

Ultra-High Dynamic Extinction Ratio Electro-Optical Modulator with Coupled Microring on SOI Platform

Silicon Microring-Based Signal Modulation for Chip-Scale Optical Interconnection

Large 10-Db Bandwidth And Low Insertion Loss Silicon Dual-Ring Modulator

Generation of high-modulation-index RF analog signals using a silicon microring resonator

Ultra Small Modulator and Demodulator for Differential Phase-Shift-Keying Data Format Based on Silicon Microring

High-Speed Silicon Microring Modulator Based on Zigzag Pn Junction

Efficient and high-speed coupling modulation of silicon racetrack ring resonators at 2 μm waveband