Abstract:The growth of high-quality ZnO bulk crystals is an outstanding challenge, and the nature of grown-in defects in crystals is far from well understood. In this work, a specially designed low-temperature-gradient CVT growth system was developed based on finite element analysis. High-quality ZnO single crystals were successfully grown. The supersaturation front in the growth system was controlled, and internal stress in the crystal was reduced by introducing a radiation baffle and a special seed pedestal. The structural, electrical, and optical properties of ZnO crystals were studied before and after oxygen annealing. The scanning electron microscope (SEM) and optical microscope (OM) results indicate the stable growth is achieved under the Zn-rich growth condition. The X-ray rocking curve measurements reveal the high crystalline quality of the grown crystal with the full-width at half-maximum (FWHM) value of 17 arcsec for the (004) reflection. The time-of-flight secondary ion mass spectroscopy (ToF-SIMS) results prove the high purity of grown crystals and reveal the variations of trace impurity concentrations in crystals. When annealed in oxygen at 1000 °C, the optical band gap (Eg) changes from 2.50 eV to 3.15 eV. The Raman analysis indicates that oxygen vacancies (Vo) in the as-grown crystal disappear after annealing. The Hall measurements show that the room temperature (RT) mobilities before and after annealing are 197 cm2V−1c−1 and 207 cm2V−1c−1, respectively. The RT carrier concentration decreases by about two orders of magnitude to 5.45 × 1015 cm−3, while the RT resistivity increases by about one order of magnitude to 5.57 Ω cm after annealing. The positron annihilation lifetimes (PALS) results prove the presence of Zn vacancies (Vzn) after annealing. The origins of as-grown ZnO green luminescence (GL) and the temperature-dependent blue shifts of the GL peak positions are explained based on Zni and Vo defects. The fine structures of annealed ZnO GL are found to be related to Vzn native defects rather than Cu impurity.

Crystal Growth of ZnO by Flux Method

Effect of Solution Concentrations on Crystal Structure, Surface Topographies and Photoluminescence Properties of ZnO Thin Films

Mist CVD Growth of ZnO-Based Thin Films and Nanostructures

Growth Techniques for Bulk ZnO and Related Compounds

Controlled Crystal Growth of ZnO Nanobelts by Chemical Vapor Deposition Method

Crystal growth, finite element analysis and oxygen annealing of ZnO bulk crystal grown by low-temperature-gradient chemical vapor transport

STRUCTURAL AND OPTICAL STUDIES OF ZnO FILMS GROWN AT LOW TEMPERATURE

RESEARCH PROGRESS ON GROWING OF BULK ZnO SINGLE CRYSTAL

Epitaxial Growth Of Zno On Gan/Sapphire Substrate By Radio-Frequency Magnetron Sputtering

Low-temperature growth of uniform ZnO particles with controllable ellipsoidal morphologies and characteristic luminescence patterns.

Melt Grown ZnO Bulk Crystals

Hydrothermal Growth and Characterization of ZnO Crystals

Crystal-Growth Process of Single-Crystal-like Mesoporous ZnO through a Competitive Reaction in Solution

Crystal Growth and Luminescent Properties of ZnO Sub-microrods and Microrods

Flux growth of (Pb,La)(Zr, Sn,Ti)O3 single crystals and their characterization

Influence Mechanism of Growth Temperature and Source Atomosphere Concentration on the ZnO Crystal Growth

GROWTH CHARACTERISTICS OF Bi2Sr2CaCu2Oy SINGLE CRYSTALS USING SELF-FLUX

Controllable Growth of Zno Mesocrystals Using A Facile Electrochemical Approach

Growth Habit Control of Zno Single Crystals in Molten Hydrous Alkali Solutions

Studies on the Synthesis and Growth Mechanism of Single Crystal ZnO Nanowires

Growth and Electrical Properties of Zinc Oxide Nanowires.