Design of High G Accelerometer Based on Meso-Piezoresistance Effect

CHEN Shang,XUE Chen-yang,ZHANG Wen-dong,ZHANG Bin-zhen,WANG Jian,FAN Bo
DOI: https://doi.org/10.3969/j.issn.1004-1699.2008.03.020
2008-01-01
Abstract:According to the theory of Meso-piezoresistance effect,a high g accelerometer is designed with the sensitive unit of thin film of quantum well.It is desirable that the application of thin film of quantum well may improve the sensitivity of accelerometer.The micro-accelerometer is processed by GaAs-based surface micromachining and control hole technology.The measurement of the structure is completed by means of shocking hammer,and the results are analyzed by the shock response spectrum.The experiment results show that fabricating high g accelerometer based on theory of Meso-piezoresistance effect and MEMS technology is feasible and the results of the designed accelerometer are well agreement with the standard accelerometer.
What problem does this paper attempt to address?