Abstract:Crystalline silicon, including Czochralski silicon (Cz-Si) and multicrystalline silicon (mc-Si),is main material for photovoltaic (PV) industry. How to produce more productive and less expensive crystalline silicon materials is still a big challenge. As we know, the seed-assisted growth method can be used to fabricate cast-mono (CM-Si) silicon by directional solidification, which should combine the both advantages of Cz-Si and mc-Si. However, there remain some problems to be resolved in growing CM-Si silicon ingots, particularly the control of dislocations which are the major and most detrimental defects in CM-Si. They can act as precipitation sites for impurities and thus reduce the carrier lifetime in ingots. Unlike mc-Si ingots, once dislocations are generated in the bottom of CM-Si ingots, they will glide and propagate along the growth direction without hindrance due to the lack of grain boundaries. In this presentation, we review our recent work of how to control defects, specially dislocations, in CM-Si. We induce a grain boundary by adjusting the orientation of seeds which can suppress the generation of dislocations originated from the junction of seeds. We have investigated the effect of Σ5, Σ13a grain boundary relationship at seed junctions of <100>-oriented CM-Si on dislocations and solar cell performance. We also use <110>-oriented seeds to grow new orientation CM-Si ingots to control the generation and propagation of dislocations. The results show that by designing the orientation of seeds, the dislocation density can be decreased and the solar cell efficiency can be improved obviously.

Research progress in casting technologies for multicrystalline silicon in solar cells

Research Progress in SiN for Multicrystalline Silicon Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Research and Development Status of Silicon Materials for Solar Cell

Evaluation of Large-Scale Recycled Seed for Cast Monocrystalline Silicon: Defect Multiplication Mechanisms and Feasibility

Seed-Assisted Growth of Cast-Mono Silicon for Photovoltaic Application: Challenges and Strategies

Research Progress of Directional Solidification Technology for Solar Grade Multicrystalline Silicon

Structure Characteristic and Defects Controlling in Cold Crucible Directional Solidification of Multicrystalline Silicon for Solar cells

Preparation Development of High-Quality Solar-Grade Multi-Crystalline Silicon by Directional Solidification

Effect of Different Parameters on Solidification Structure of Multi-Crystalline Silicon Produced by Continuous Casting

Improving quality of cast monocrystalline Si ingot with seed crystal strips and graphite soft felt

Growth and Defects in Cast‐Mono Silicon for Solar Cells: A Review

(Invited) Defects in Cast-Mono Crystalline Silicon

Research Progresses on High Efficiency Amorphous and Microcrystalline Silicon-Based Thin Film Solar Cells

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Development of Studies of Crystallization Structures,Crystal Defects and Impurities in Multicrystalline Silicon by Unidirectional Solidification

Research Progress on Metallurgical Processing of Solar Grade Multicrystalline Silicon

Preparation and research of casting polysilicon

Dislocation determination and quality control of industrial casting monocrystalline silicon

Numerical Study Of Von Mises Stress During Continuous Casting Of Multicrystalline Silicon With Large-Size Grains

Higher quality composite silicon ingot with monocrystalline and multicrystalline bricks