Ka Band Silicon Based MEMS Filter

Yong ZHANG,Yuan-wei YU,Shi-xing JIA,Jian ZHU,Chen CHEN
DOI: https://doi.org/10.3969/j.issn.1004-1699.2008.02.035
2008-01-01
Abstract:Filter is a kind of important component in microwave and millimeter wave circuits and systems. A novel kind of filter is introduced. It is based on the substrate integrated waveguide (SIW) and MEMS technique. Induced coupling plasma (ICP) deep etching is done to get vertical via-holes in the high resistivity silicon substrate. Measured results of a fabricated MEMS resonator which is the core component of the SIW filter show a high Q of 180 and a small error of 2% of the resonating frequency. To design a Ka band filter, theoretical calculation and experiment design method are used and described. The frequency of the filter is 30. 3 GHz; the insertion loss is 1. 5 dB; and the band width is 5%. The final size of the chip is 10. 0 mm×2. 8 mm×0. 4 mm.
What problem does this paper attempt to address?