Intensity Modulation in Single-Mode Microchip Nd : Yag Lasers with Asymmetric External Cavity

Tan Yi-Dong,Zhang Shu-Lian,Liu Wei-Xin,MaoWei
DOI: https://doi.org/10.1088/1009-1963/16/4/026
2007-01-01
Chinese Physics
Abstract:Intensity modulation induced by the asymmetric external cavity in single-mode microchip Nd:YAG lasers is presented. Two kinds of experimental results are discussed based on multiple feedback effects.In one case, the intensity modulation curve is a normal sinewave, whose fringe frequency is four times higher than that of a conventional optical feedback system, caused by multiple feedback effects. In the othercase, the intensity modulation curve is the overlapping of the above quadruple-frequencysignalandconventional optical feedback signal,which is determined by the additional phase difference induced by the asymmetric external cavity.The theoretical analyses are in good agreement with the experimental results. The quadruple-frequency modulation of the laser output intensity can greatly increase the resolution of displacement measurement of an optical feedback system.
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