Abstract:The photoconductive antenna is a kind of widely used broadband terahertz (THz ) radiation source in THz time-domain spectroscopy systems, and the substrate material of the antenna is crucial for the characteristics of generated THz wave. The widely used photoconductive antenna material is the second-generation semiconductor of GaAs, while the third-generation semiconductor has a larger band gap, , which is more advantageous for improving the power of THz wave from photoconductive antenna. In this work, the current surge model of large-aperture photoconductive antennas was used to simulate the characteristics of THz waves radiated by the photoconductive antenna made from commonly used SI-GaAs and LT-GaAs, and the third-generation semiconductors (ZnSe , GaN, SiC) ) that are expected to be used in the future for photoconductive antennas. The results show that under the same bias electric field and their respective highest pump laser flux, LT-GaAs antenna generates THz waves with the highest amplitude and widest frequency. The photoconductive antenna made by the third-generation semiconductor materials can withstand higher bias electric fields, and the intensity of radiated THz waves is much greater than that from GaAs antennas under their respective maximum bias electrical fields. This work provides theoretical guidance for the development of new third-generation semi- conductor photoconductive antennas.

Two-dimensional Monte Carlo Simulation of Screening of the Bias Field in Terahertz Generation from Semi-Insulated GaAs Photoconductors

Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode

Application of Monte Carlo Method to Gaas Photoconductive Semiconductor Switches

Electrical Field Distribution in Terahertz SI-GaAs Photoconductive Antennas

The Calculation of Terahertz Wave Power Radiated from Gaas Photoconductive Antenna

Simulations of GaAs Photoconductive Switch by Using Improved Carrier Velocity Formula under Ultra-high Electric Field

Effects of electric field screening induced by photogenerated carriers on terahertz wave measurement in a GaAs epitaxial structure

Three-Dimensional Simulation Study of Bias Effect on Single Event Effects of Sige Heterojunction Bipolar Transistor

Simulation and optimisation of terahertz emission from InGaAs and InP photoconductive switches

Roles of Voltage in Semi-Insulating GaAs Photoconductive Semiconductor Switch

Optimizing Biased Semiconductor Superlattices for Terahertz Amplification

Transverse Current Generation by Circularly Polarized Light in Terahertz-Biased Semiconductor

Simulation Analysis of Radiation Terahertz Wave Characteristics of Photoconductive Antenna Materials

Analysis of Screening Effects on Terahertz Photoconductive Devices using a Fully-Coupled Multiphysics Approach

Electric Field Analysis for the Design of LT-GaAs Photoconductive Terahertz Antennas

Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors

Enhanced Terahertz Emission from Photoconductive Antenna with Ohmic Contact Electrodes Biased by Out-of-phase Voltages

Nanoscale Impact Ionization and Electroluminescence in a Biased Scanning-Tunneling-Microscope Junction

Transient Thermal Effect of Semi-Insulating Gaas Photoconductive Switch

Multiple charge domains model for the lock-on effect in GaAs power photoconductive switches

Bias Effect in Photocurrent Response of Si Nanocrystals