Transverse Current Generation by Circularly Polarized Light in Terahertz-Biased Semiconductor

Tomohiro Fujimoto,Yuta Murotani,Tomohiro Tamaya,Takayuki Kurihara,Natsuki Kanda,Changsu Kim,Jun Yoshinobu,Hidefumi Akiyama,Takeo Kato,Ryusuke Matsunaga
2024-11-01
Abstract:Transverse current generation by circularly polarized light in biased matter has attracted considerable attention for studies of Floquet engineering and inverse spin Hall effect. Field-induced circular photogalvanic effect (FI-CPGE) also contributes to the current, but has been overlooked in many literatures. Using terahertz pulses as a bias field, we study the case of a prototypical semiconductor GaAs by two-dimensional Fourier analysis. We demonstrate the remarkable role of FI-CPGE resonantly enhanced near the band degeneracy, suggesting its potential to detect monopoles in momentum space. Our results provide a comprehensive understanding of the light-induced anomalous Hall effect.
Materials Science
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