Study of the Electric Properties of BiFe1−xZrxO3+δ Films Prepared by the Sol–gel Process

Hongri Liu,Zuli Liu,Kailun Yao

DOI: https://doi.org/10.1016/j.physb.2006.09.003

IF: 2.988

2006-01-01

Physica B Condensed Matter

Abstract:BiFe1−xZrxO3+δ (BFZO) films were deposited on indium tin oxide (ITO)/glass substrates by sol–gel process and randomly oriented BFZO films with x=0–0.40 were obtained. We studied the effects of Zr substitution on structural, ferroelectric, dielectric and leakage conduction properties in BFZO system. R3m structure was observed for all films, and pyrochlore phase began to occur for the film with x=0.20. Enhanced ferroelectric property was observed at room temperature because of the substitution of Zr for the films with x=0.05–0.20. The largest remnant polarization of 2.9μC/cm2 was acquired in the film with x=0.20. Furthermore, it is observed that the dielectric constant was enhanced by the substitution of Zr. The film with x=0.10 has the largest dielectric constant at the same frequency. The leakage conduction was not reduced with the increase of Ti when x<0.20 and was substantially reduced when x>0.10.