High bright blue organic light-emitting diodes based on a novel silole derivative

Qing Li,Junsheng Yu,Lü Li,Yadong Jiang,Shuangling Lou,Xiaowei Zhan
DOI: https://doi.org/10.1117/12.783643
2007-01-01
Abstract:A high performance blue organci light-emitting diode (OLED) using a silole derivative as emitter has been fabricated by vacuum thermal evaporation method. The triple-layer device structure is indium tin oxide (ITO)/N, N'-diphenyl-N,N'-bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB) (50 nm)/1,2-bis(1-methyl-2,3,4,5-tetraphenyl-1H-Silole-1-yl)ethane (BMPSiE) (40 nm)/tris (8-hydroxyquinolinolato) aluminum (Alq(3)) (10 nm)/Mg : Ag(100 nm 10:1), where BMPSiE was employed as an emitting layer (EML), NPB and Alq3 act as hole transporting layer (HTL) and electron transporting layer (ETL), respectively. Experimental results demonstrate that the device consisting of novel emissive material has a maximum luminance of 13500 cd/m(2) and a current density of 1520 mA/cm(2) at a bias voltage of 20 V.The peak of electroluminescent spectrum locates at 483 nm which well accord with the photoluminescence results. The Commissions International de l'Eclairage (CIE) coordinates locate at (0.20, 0.33), which are independent of the variation of forward bias.
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