Abstract:AIP Advances, Volume 12, Issue 6, June 2022. The commercialization of GaN-based Schottky barrier diodes in middle- and high- voltage applications still faces many challenges, in which the lack of an effective selective area p-type doping method is one of the main obstacles. This paper proposes novel vertical GaN-based Schottky diodes with trench MIS structure and an embedded p-GaN protection layer (junction-trench MIS barrier Schottky diodes, J-TMBS). The trench structure and lateral p-n junctions can be achieved by selectively etching the very thin p-GaN and then regrowing n-GaN. Therefore, the fabrication technology avoids the selective area p-type doping process, and the dry etching damage and poor sidewall regrowth interface issue, which are serious in GaN Merged pn/Schottky (MPS) diodes, can also be alleviated for the proposed J-TMBS. Compared with the optimized GaN trench MIS barrier Schottky (TMBS) diodes, the surge current capability and dielectric reliability of the proposed J-TMBS are significantly improved (the electric field of the dielectric layer and maximum lattice temperature under the surge test can be reduced by 448% and 202%, respectively). In addition, the specific on-resistance (Ron,sp) and breakdown voltage remain basically unchanged compared with TMBS. Compared with the optimized GaN MPS diodes, the proposed structure improves the specific on-resistance by 17.2% benefiting from the reduced area of the JFET region without degrading the reverse I–V characteristics and surge current capability. The proposed J-TMBS exhibits potential in practical high voltage (>600 V) application of GaN Schottky power diodes.

Monolithic Integration of Trench Power Jfet with Schottky Diode

Trench Power JFET with Integrated Junction Barrier Schottky Diode

Design and Optimizing of Trench Schottky Barrier-Controlled Β-Ga2o3 Schottky Diode with Low Turn-on Voltage and Leakage Current

Trench MOS-gated power devices

Monolithic Integration of SiC Lateral MOSFET with Lateral Schottky Diode for Power Converters

A Vertical Sic Jfet with A Monolithically Integrated Jbs Diode

A Low Loss Single-Channel SiC Trench MOSFET with Integrated Trench MOS Barrier Schottky Diode

Integrated Junction Barrier Schottky Diode and MOS-Channel Diode in SiC Planar MOSFETs for Optimization of Reverse Performances

High performance SiC trench-type MOSFET with an integrated MOS-channel diode

A Novel Double Trench 4H-Sic MOSFET with Integrated Schottky Barrier Diode

SiC Double Trench MOSFET with Split Gate and Integrated Schottky Barrier Diode for Ultra-Low Power Loss and Improved Short-Circuit Capability

Superjunction MOSFET with Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study

Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

Silicon Carbide Split-Gate MOSFET with Merged Schottky Barrier Diode and Reduced Switching Loss

Numerical analysis of the GaN trench MIS barrier Schottky diodes with high dielectric reliability and surge current capability

A novel MOSFET structure with asymmetric Schottky and P-N junction source/drain on bulk silicon substrate

SiC trench MOSFET with heterojunction diode for low switching loss and high short‐circuit capability

An ultralow loss 4H-SiC double trenches MOSFET with integrated heterojunction diodes and split gate

Monolithic Integration of an Algan/Gan Metal-Insulator Field-Effect Transistor with an Ultra-Low Voltage-Drop Diode for Self-Protection

Design and Experimental Study of 4H-Sic Trenched Junction Barrier Schottky Diodes

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode