Abstract:Two RF CMOS voltage-controlled oscillators (VCOs) with source damping resistors to suppress 1/ <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.279ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 550.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-66" x="0" y="0"></use></g></svg></span> noise up-conversion are presented in this letter. Two important parameters: the phase deviation from the first harmonic term of the ideal impulse sensitivity function (ISF), and the initial phase of the first harmonic term of channel current, dominate the 1/ <span class="mjpage"><svg xmlns:xlink="http://www.w3.org/1999/xlink" width="1.279ex" height="2.509ex" style="vertical-align: -0.671ex;" viewBox="0 -791.3 550.5 1080.4" role="img" focusable="false" xmlns="http://www.w3.org/2000/svg"><g stroke="currentColor" fill="currentColor" stroke-width="0" transform="matrix(1 0 0 -1 0 0)"> <use xlink:href="#MJMATHI-66" x="0" y="0"></use></g></svg></span> noise up-conversion. Based on the outcome, the effects of the source damping resistors on the two phases are analyzed and two VCO prototypes are designed. Implemented in Taiwan Semiconductor Manufacturing Company 180 nm RF CMOS process, the VCOs achieve 64.7% and 50% frequency tuning range at 2.3–4.5 and 3–5 GHz, respectively, and perform phase noise (PN) of −131.03, −129.28, and −124.98 dBc/Hz at 1 MHz offset from output frequencies of 2.33, 3.057, and 4.57 GHz separately.<svg xmlns="http://www.w3.org/2000/svg" style="display: none;"><defs id="MathJax_SVG_glyphs"><path stroke-width="1" id="MJMATHI-66" d="M118 -162Q120 -162 124 -164T135 -167T147 -168Q160 -168 171 -155T187 -126Q197 -99 221 27T267 267T289 382V385H242Q195 385 192 387Q188 390 188 397L195 425Q197 430 203 430T250 431Q298 431 298 432Q298 434 307 482T319 540Q356 705 465 705Q502 703 526 683T550 630Q550 594 529 578T487 561Q443 561 443 603Q443 622 454 636T478 657L487 662Q471 668 457 668Q445 668 434 658T419 630Q412 601 403 552T387 469T380 433Q380 431 435 431Q480 431 487 430T498 424Q499 420 496 407T491 391Q489 386 482 386T428 385H372L349 263Q301 15 282 -47Q255 -132 212 -173Q175 -205 139 -205Q107 -205 81 -186T55 -132Q55 -95 76 -78T118 -61Q162 -61 162 -103Q162 -122 151 -136T127 -157L118 -162Z"></path></defs></svg>

A New Design of Voltage Controlled Oscillator

A Low Phase Noise VCO with Placement Reordered Cores and High-Q Bond Wire Array Inductors

A 60GHz voltage-controlled oscillator with a 3.6GHz tuning range in 180nm CMOS technology

An Improved Low Phase Noise LC-VCO with Wide Frequency Tuning Range Used in CPPLL

A Wideband Voltage-Controlled Oscillator with Gain Linearized Varactor Bank

A 40 Nm Cmos V-Band Vco with On-Chip Body Bias Voltage Control Technique

An Ultra-Low-Voltage High-Performance VCO in 0.13 μm CMOS

A 6-GHz low-phase-noise voltage-controlled oscillator

A 5.3GHz low-phase-noise LC VCO with harmonic filtering resistor

A 4.9–6.9 GHz LC VCO with low-phase-noise

A 3 GHz Low Power LC VCO with Voltage Boosted Circuit from 0.5 V Supply

Design of a 60 GHz, 11.7% Tuning-Range Voltage-Controlled Oscillator in 65 Nm CMOS Technology

A 24ghz Low Phase Noise Feedback Cmos Lc-Vco

A 2.3–5-GHz LC -VCO With Source Damping Resistors to Suppress 1/ f Noise Up-Conversion

A 418 GHz CMOS Fully Integrated LC Balanced Oscillator with Symmetrical Noise Filter Technique and Large Tuning Range

A Low Phase-Noise LC Voltage Controlled Oscillator in CMOS Technology

An Optimally Coupled Low Phase Noise Wideband Quadrature Voltage-Controlled Oscillator

A 4.2-5 GHz, Low Phase Noise LC-VCO with Constant Bandwidth and Small Tuning Gain

A 6 GHz Wideband Low-phase-noise CMOS LC VCO

Design of a Low-Phase-Noise 70-/105-GHz Dual-Band VCO With Common Mode Resonance Expansion

A 2.34–3.29GHz CMOS LC VCO with low phase noise and low power