Abstract:A deep understanding of distinct functional differences of various defects in semiconductor materials is conducive to effectively control and rationally tune defect-induced functionalities. However, such research goals remain a substantial challenge due to great difficulties in identifying the defect types and distinguishing their own roles, especially when various defects coexist in bulk or nanoscale material. Hereby, we subtly selected a molecular-type semiconductor material as structural mode composed of supertetrahedral chalcogenide Cd-In-S nanoclusters (NCs) with intrinsic vacancy point defect at the core site and antisite point defects at the surface of supertetrahedron and successfully established the correlation of those point defects with their own electrochemiluminescence (ECL) behaviors. The multi-channel ECL properties were recorded, and the corresponding reaction mechanisms were also proposed. The predominant radiation recombination path of ECL emission peak at 585 nm was significantly distinguished from asymmetrically broad PL emission with a peak at 490 nm. In addition, the ECL performance of the coreless supertetrahedral chalcogenide nanocluster can be modulated by atomically precise doping of monomanganese ion at the core vacant site. A relatively high ECL efficiency of 2.1% was also gained. Actually, this is the first investigation of ECL behavior of semiconductor materials based on supertetrahedral chalcogenide nanoduster in aqueous solution. Current research may open up a new avenue to probe the roles of various different defects with defined composition and position in the NC. The versatile and bright ECL properties of Cd-In-S-NC combined with tunable ECL potential and ECL peak suggest that the new kind of NC-based ECL material may hold great promising for its potential applications in electrochemical analysis, sensing and imaging.

Solid State Cathodoluminescence and the Properties of Its Two Emission Peaks

Cathodoluminescence and its mapping of flower-like ZnO, ZnO/ZnS core–shell and tube-like ZnS nanostructures

Scanning Cathodoluminescence Microscopy: Applications in Semiconductor and Metallic Nanostructures

Dynamics of bound exciton complexes in CdS nanobelts.

Luminescence of CdS generated by high intensity excitation below the bandgap

Cathodoluminescence Nanoscopy: State of the Art and Beyond

Unveiling the nature of cathodoluminescence from photon statistics

Application of Spectral Cathodoluminescence to Multi-Modal Research at the Nano-Scale: Case Studies from the UNSW Electron Microscope Unit

Cathodoluminescence of Silicon in the Visible–ultraviolet Region

Fiber-optic Based Spectral Cathodoluminescence: Simple and Economic Option for Use in Conventional and Environmental Scanning Electron Microscopy

Dual-Band Emission from Intrinsic and Extrinsic Self-Trapped Excitons in a Zero-Dimensional Copper Halide Cs3Cu2Br5

Discrimination of coherent and incoherent cathodoluminescence using temporal photon correlations

Temperature-dependent Near-Infrared Emission of Highly Concentrated Cu2+in CaCuSi4O10phosphor

Luminescence and thermal behaviors of free and trapped excitons in cesium lead halide perovskite nanosheets.

Intrinsic "vacancy Point Defect" Induced Electrochemiluminescence from Coreless Supertetrahedral Chalcogenide Nanocluster.

Luminescence Studies of a Si/SiO2 Superlattice

Dual-Band Emission from Intrinsic and Extrinsic Self-Trapped Excitons in a Zero-Dimensional Copper Halide Cs 3 Cu 2 Br 5

Cathode-Like Luminescence on Vacuum-Dielectric Interface under Dc Voltage Based on Self-Stabilizing Secondary Electron Emission

Two‐Step Anti‐Stokes Photoluminescence of CsPbX 3 Nanocrystals

Unraveling Mechanisms of Highly Efficient Yet Stable Electrochemiluminescence from Quantum Dots.

Ab initio Study of Luminescence in Ce-doped Lu$_2$SiO$_5$: The Role of Oxygen Vacancies on Emission Color and Thermal Quenching Behavior