Plant Growth of E-beam Irradiated or Ion Implanted Seeds of Ornamental Celosia

WANG Dan
DOI: https://doi.org/10.3969/j.issn.1000-3436.2006.03.015
2006-01-01
Journal of Radiation Research and Radiation Processing
Abstract:Celosia seeds were irradiated by 3MeV electron beams or implanted with 30keV N+ or H+ ions, The results showed that the two kinds of treatments could inhibit growth and development of the plants and induce varia- tion of the flower. The variation rate was between 0.5%—2%. LD50 of the seeds irradiation by the E-beams was esti- mated at about 1.2kGy. LD50 of the seed ion implantation varied with the ion. LD50 of H+ ion implantation was 1.6×1017 ions/cm2, and LD50 of N+ ion implantation was less than 1.6×1016 ions /cm2. Suitable treatments of the seeds were 1.5kGy E-beam irradiation, or implantation of1.6×1016 N+ /cm2. The seeds were not sensitive to higher dose irradiation or ion implantation. And it seems that Celosia seeds have strong radiation resistance.
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