Abstract:Ab initio methods based on density functional theory are employed to investigate the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen (H)-passivated silicon (Si) NCs are oxidized. Besides the well-known quantum confinement effect, the type of O bonding and the oxidation state of Si at the oxide/NC interface are found to significantly affect the optical properties of oxidized Si NCs. After oxidation, the excitation energies of Si-35 and Si-66 increase, while those of Si-87 and Si-123 decrease. We show that oxidation-induced redshifts in the light emission from Si NCs do not always result from defective O such as doubly bonded O at the oxide/NC interface. When Si atoms at the oxide/NC interface are mainly in low oxidation states, backbond O at the interface per se results in the redshifts in the light emission from Si NCs. When Si atoms at the oxide/NC interface are mainly in high oxidation states. Si3+=O at the interface leads to the redshifts in the light emission from Si NCs. It is found that for Si NCs with perfect oxide/NC interface (i.e., O at the interface is all backbond O) the seriously weakened next-nearest-neighboring Si Si of Si3+ readily breaks after excitation. At the oxide/NC interface. Si2+=O induced strong electronic localization and Si2+=O and Si3+=O induced reduction of interface polarization stabilize the geometry of oxidized Si NCs at the excited state. The electronic localization of severely stressed bridge O at the oxide/NC interface is relatively weak. This facilitates the breaking of nearest-neighboring Si Si at the oxide/NC interface as oxidized Si NCs are excited.

Effects Of Surface Oxygen On The Electronic Properties Of Silicon Nanoclusters

A density functional study of the structural and electronic properties of silicon monoxide clusters.

Oxygen adsorption on small Si clusters: A full-potential linear-muffin-tin-orbital molecular-dynamics study

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

A Density-Functional Theory Study on the Chemisorption and Stm Images of Ag(100)/O Surface

First-principles Calculations of the Electronic Structures and Optical Properties of Oxygen Passivated 4H-Sic Nanostructures

The Role of Surface Terminations on the Band Structure and Optical Properties of Silicon Nanonets

Surface modification of chlorine-passivated silicon nanocrystals.

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

Study on the Electronic Structures and Optical Properties in Four Directions of Si-NWs Modified by Oxygen Atoms

The surface state and adsorption property of porous silicon

Theoretical Investigation of Structural Stability and Electronic Properties of Hydrogenated Silicon Nanocrystals: Size, Shape, and Surface Reconstruction

Effects of Oxygen Adsorption on the Surface State of Epitaxial Silicene on Ag(111)

Oxygen Adsorption on Ag∕Si(111)-7×7 Surfaces

Theoretical Study of O-2 Molecular Adsorption and Dissociation on Silicon Carbide Nanotubes

Surface Chemical Control Of The Electronic Structure Of Silicon Nanowires: Density Functional Calculations

The Structural And Electronic Properties Of Ag-Adsorbed (Sio2)(N) (N=1-7) Clusters

Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size

Size, oxidation, and strain in small Si/SiO2 nanocrystals

Adsorption and surface diffusion of oxygen on 3C and 2H-SiC polytypes: Numerical studies

Electronic properties, doping and defects in chlorinated silicon nanocrystals